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Bessolov Vasily Nikolaevich

Publications in Math-Net.Ru

  1. Полуполярный нитрид алюминия: эпитаксия объемного материала на наноструктурированной кремниевой подложке

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026),  25–28
  2. The investigation of the impact of nano-structured AlN/Si(100) templates for the growth of semipolar AlN$(10\bar11)$ layers

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  3–7
  3. The epitaxy of AlN$(11\bar{2}2)$ layers on GaN$(11\bar{2}2)$/$m$-Al$_2$О$_3$ template by hydride vapour-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  42–44
  4. Metalorganic vapor phase epitaxy of AlN layers on a nanostructured AlN/Si(100) template synthesized by reactive magnetron sputtering

    Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  944–947
  5. HVPE epitaxy of semipolar AlN(10$\bar{1}$1) layers on the AlN/Si(100) template

    Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  474–477
  6. Surface morphology of AlN layers grown on a nano-structured SiN$_x$/Si(100) template

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  3–6
  7. Semipolar wide-band III–N-layers on a silicon substrate: orientation controlling epitaxy and the properties of structures (review)

    Zhurnal Tekhnicheskoi Fiziki, 93:9 (2023),  1235–1262
  8. Initial stages of growth of the $\mathrm{GaN}(11\bar22)$

    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  3–6
  9. Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate

    Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  720–723
  10. Anisotropic stresses in $\mathrm{GaN}(11\bar20)$ layers on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate during hydride vapor phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  266–270
  11. Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  908–911
  12. Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  356–359
  13. Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate

    Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2123–2126
  14. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
  15. Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  12–14
  16. Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers

    Fizika Tverdogo Tela, 61:12 (2019),  2317–2321
  17. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy

    Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
  18. Properties of semipolar GaN grown on a Si(100) substrate

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
  19. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
  20. Semipolar gan layers grown on nanostructured Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
  21. Hexagonal AlN layers grown on sulfided Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
  22. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

    Fizika Tverdogo Tela, 59:4 (2017),  660–667
  23. Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Fizika Tverdogo Tela, 57:10 (2015),  1916–1921
  24. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
  25. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  1–8
  26. Epitaxy of gallium nitride in semi-polar direction on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  21–26
  27. Structural characterization of GaN epilayers on silicon: Effect of buffer layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:7 (2011),  72–79
  28. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
  29. Sulfide passivation of $\mathrm{A}^{3}\mathrm{B}^{5}$ semiconductors: model description and experiment

    Fizika Tverdogo Tela, 34:6 (1992),  1713–1718
  30. RELAXATION LIQUID EPITAXY WITH MASS-TRANSFER INVERSION - SIMULATION AND EXPERIMENT

    Zhurnal Tekhnicheskoi Fiziki, 62:3 (1992),  100–105
  31. Потенциальные барьеры на поверхности $n$- и $p$-GaAs (100): кинетика движения поверхностного уровня Ферми при химической обработке

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1406–1413
  32. DIFFUSION RELAXATION EFFECT UNDER GAALAS LIQUID EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  17–20
  33. EXPERIMENTAL JUSTIFICATION OF A RELAXATION LIQUID EPITAXY MODEL WITH MASS-TRANSFER INVERSION DESIGNED FOR THE FORMATION OF SUPERFINE A3B5 LAYERS

    Zhurnal Tekhnicheskoi Fiziki, 60:1 (1990),  165–169
  34. RELAXATION LIQUID EPITAXY BASED ON THE MASS-TRANSFER INVERSION - ITS POTENTIALITIES FOR THE FORMATION OF HYPERFINE A3B5 LAYERS

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1507–1512
  35. SUPERTHIN GAAS LAYER GROWTH ON THE GAALAS SUBSTRATE BY LIQUID EPITAXY

    Zhurnal Tekhnicheskoi Fiziki, 56:5 (1986),  910–913
  36. Interface Luminescence of $n$-GaAs/$n$-GaAlAs Heterostructure Produced by Liquid Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1313–1317
  37. Luminescence of (GaAl)P Layers Elastically and Plastically Deformed in Heteroepitaxy

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1078–1080
  38. Development of $(Ga\,Al)As$ superfine layers by liquid epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:8 (1985),  465–469
  39. Нарушение псевдоморфного состояния в Ga$_{1-x}$Al$_{x}$P/GaP структурах

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:3 (1984),  149–153
  40. DISTINCTION OF THERMAL-EXPANSION COEFFICIENTS IN GA1-XALXP-GAP HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  411–412
  41. Квантовая эффективность пластически и упруго деформированных варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2173–2176
  42. Спектры фоточувствительности варизонных Ga$_{1-x}$Al$_{x}$P $p{-}n$-структур

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  125–128

© Steklov Math. Inst. of RAS, 2026