Vodnev Andrey Anatol'evich

Publications in Math-Net.Ru

1. Фотоэлектрические свойства AlGaAs$-$GaAs-гетероструктур с туннельно-тонким «широкозонным окном»
   
   Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  597–600
2. HETEROSTRUCTURES WITH TUNNEL THIN (20-50-A) SURFACE ALGAAS-LAYERS OBTAINED BY THE LPE METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:15 (1988),  1429–1433
3. VILET PALGAAS-PGAAS-NGAAS-PHOTOELEMENTS WITH SUPERTHIN (30-300 A) WIDE-ZONE LAYERS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988),  76–79
4. Photoluminescence of Quantum-Dimensional Layers in AlGaAs-Heterostructures Produced by the Method of Low-Temperature Liquid-Phase Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1212–1216
5. Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  381–383
6. $Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1089–1093