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Publications in Math-Net.Ru
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Structure of the energy spectrum of holes in IV–VI materials from a different viewpoint
Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 890–896
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Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1168–1175
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Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1055–1059
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On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation
Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 757–766
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Doping and defect formation in thermoelectric ZnSb doped with copper
Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1611–1620
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Thermoelectric efficiency of intermetallic compound ZnSb
Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 448–453
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Resonance states, heavy quasiparticles, and the thermoelectric figure of merit of IV–VI materials
Fizika i Tekhnika Poluprovodnikov, 46:7 (2012), 889–895
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Doping of IV–VI semiconductors and the energy spectrum of holes with resonance states taken into account
Fizika i Tekhnika Poluprovodnikov, 44:6 (2010), 742–748
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Role of defects in acceptor doping of PbTe-type semiconductors by elements of the I group
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 358–367
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Примесные состояния индия в PbS
Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2155–2159
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Переменная валентность в твердом растворе
Pb$_{1-x}$Sn$_{x}$Se (${x=0.15}$), легированном натрием
Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1576–1580
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Примесь индия в селениде свинца — центр с отрицательной
корреляционной энергией
Fizika i Tekhnika Poluprovodnikov, 23:7 (1989), 1230–1234
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Quasi-Localized Levels in PbSe$\langle$In$\rangle$
Fizika i Tekhnika Poluprovodnikov, 21:11 (1987), 2091–2094
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Characteristic Properties of Donor Action In in PbSe
Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1778–1782
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Energy Levels Related with Natural Defects in $n$-Туре Lead Sulphide
Fizika i Tekhnika Poluprovodnikov, 21:4 (1987), 743–746
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Study of the Mechanism of PbSe Isovalent-Acceptor Doping by the Seebeck-Effect Method
Fizika i Tekhnika Poluprovodnikov, 21:2 (1987), 310–313
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$p$-Type Conduction and Defect Formation in $n$- and $p$-Type Lead Selenide
Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1823–1828
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Study of Resonance States Related with Eigen Defects in $p$-Type PbSe
Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 160–161
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Peculiarities of Hole Scattering by Isovalent Tin Impurity
in PbSe Resulting in Strong Decrease of Conduction
Fizika i Tekhnika Poluprovodnikov, 19:10 (1985), 1746–1749
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On the Nature of IV-Group Impurity States of Different Valencies in Lead Chalcogenides
Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 941–944
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Особенности спектров поглощения
$p$-PbSe с изовалентными примесями замещения
Fizika i Tekhnika Poluprovodnikov, 18:9 (1984), 1723–1726
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Резонансные состояния примесей переходных элементов (Ti, Cr)
в РbТе
Fizika i Tekhnika Poluprovodnikov, 17:5 (1983), 782–785
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