Baranova Elena Konstantinovna

Publications in Math-Net.Ru

1. Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1128–1132
2. Высокотемпературная ионная имплантация мышьяка в кремний
   
   Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1132–1133
3. SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO SILICON
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  43–45
4. Исследование распределения аморфной и кристаллической фазы ионно-синтезированного SiC в Si
   
   Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  731–732
5. Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping
   
   Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  920–922
6. Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping
   
   Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  149–152