Ivanov P A

Publications in Math-Net.Ru

1. High-voltage 4$H$-SiC based avalanche diodes with a negative beve
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
2. TCAD simulation of high-voltage 4$H$-SiC diodes with an edge semi-insulating region
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  201–206
3. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
4. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
5. Avalanche breakdown in 4$H$-SiC Schottky diodes: reliability aspects
   
   Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2133–2138
6. Influence of dopant incomplete ionization on the capacitance of a reverse-biased 4H-SiC $p^{+}$–$i$–$n^{+}$ diode
   
   Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018),  955–958
7. Avalanche breakdown stability of high voltage (1430 V) 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1527–1531
8. Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1187–1190
9. Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  937–940
10. Isothermal current–voltage characteristics of high-voltage 4$H$-SiC junction barrier Schottky rectifiers
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  668–673
11. I–V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1427–1430
12. High-voltage (3.3 kV) 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  677–681
13. Features of degradation in high-voltage 4H-SiC $p$–$i$–$n$ diodes under the action of forward current pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:8 (2011),  7–12
14. Bistable low temperature (77 K) impurity breakdown in $p$-type 4H-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  902–904
15. Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  680–683
16. SiC СВЧ полевые транзисторы: граничная частота$-$мощность
    
    Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  1913–1921
17. NORMALLY CLOSED SIC (6H) FIELD TRANSISTOR WITH R-P-LOCK
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  1–5
18. SIC-6H FIELD TRANSISTOR WITH RECORD TRANSCONDUCTANCE FOR CARBIDE-SILICON TRANSISTORS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:16 (1989),  36–42
19. HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  289–293
20. Temperature Dependence of Capacitance of Carbide-Silicon $p{-}n$ Junctions
    
    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1257–1260
21. Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987),  1168–1171
22. Tension limitations obtained by carbide-silicon R-P-structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  773–776
23. Study of Deep Centers in $p{-}n$ Junctions Produced by Ion Doping of $6H$-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1430–1433
24. Tunnel-diode based on $Si\,C$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  976–978
25. Silicon-carbide light-emitting-diodes in the blueviolet spectrum area
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  246–248
26. Silicon-carbide R-P-structures produced by liquid epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  238–241