Kalinovskii Vitalii Stanislavovich

Publications in Math-Net.Ru

1. Импульсные характеристики однопереходных и трёхпереходных фотопреобразователей лазерного излучения
   
   Optics and Spectroscopy, 133:11 (2025),  1145–1149
2. Generation of microwave pulses by zero-bias monolithic triple-junction AlGaAs/GaAs $p$–$i$–$n$ photoconverters and modules
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  27–30
3. Determination of local thermal conductivity of soldered joints of InGaP/Ga(In)As/Ge heterostructure with heat-dissipating AlN ceramics based on Sn$_{42}$Bi$_{58}$ alloy by laser photodeflection microscopy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  31–34
4. Monolithic triple-junction $p$–$i$–$n$ AlGaAs/GaAs laser photoconverter
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  35–38
5. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
6. High-power subnanosecond module based on $p$–$i$–$n$ AlGaAs/GaAs photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  5–8
7. Subnanosecond AlGaAs/GaAs photodetectors with Bragg reflectors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  38–41
8. Tunnel diodes $n^{++}$-GaAs:($\delta$-Si)/$p^{++}$-Al$_{0.4}$Ga$_{0.6}$As:(C) for connecting elements of multijunction laser photoconverters
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  39–42
9. Degradation study of subnanosecond photovoltaic module parameters during thermocycling
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  44–46
10. On the possible non-uniqueness of the conversion of laser radiation into electric current in multijunction monolithic photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:1 (2024),  39–42
11. Investigation of radiation resistance of heterostructure silicon solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  18–21
12. Development and study of a model of an autonomous energy information station of free space optical communication
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  21–25
13. Power source based on Al$_{0.8}$Ga$_{0.2}$As/GaAs photovoltaic converter and YPO$_4$:Eu/($^{238}$Pu) radioluminescent emitter
    
    Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1875–1880
14. Studies of the thermal conductivity and thermal resistance of solder layers with lead-free pastes by the photodeflection method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:22 (2022),  39–42
15. Mesa architecture and efficiency of InGaP/Ga(In)As/Ge solar cells
    
    Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1067–1074
16. Semiconductor photoelectric solar energy converters metrology
    
    PFMT, 2020, no. 3(44),  22–29
17. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
18. Tritium power supply sources based on AlGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  30–33
19. Hybrid solar cells with a sunlight concentrator system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  52–54
20. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
21. AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1647–1650
22. Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  25–31
23. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
24. Radiation resistance of $\alpha$-Si:H/Si heterojunction solar cells with a thin $i$-$\alpha$-Si:H inner layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  95–102
25. A study of the heat-removal process at the semiconductor–ceramics interface in solar cells by the laser thermal-wave method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:11 (2016),  33–40
26. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88
27. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1249–1253
28. Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1677–1680
29. Evaluation of the conversion efficiency of thin-film single-junction ($a$-Si:H) and tandem ($\mu c$-Si:H + $a$-Si:H) solar cells by analysis of the experimental dark and load current-voltage (I–V) characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  952–959
30. Diagnostics of heat removal from semiconductor solar cells by laser thermowave methods
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:14 (2011),  60–67
31. Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1284–1289
32. Особенности поведения радиационных дефектов в структурах на основе Al$_{x}$Ga$_{1-x}$As/GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1320–1322
33. Влияние радиации на фотоэлектрические параметры AlGaAs${-}(p{-}n)$-гетероструктур
    
    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1391–1395
34. Reduction of surface recombination current in R-P $Al\,Ga\,As/Ga\,As$ transitions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:24 (1987),  1481–1485
35. Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986),  719–723