Fedorova O M

Publications in Math-Net.Ru

1. Structure and electrical conductivity of the perovskites Pr$_{1-x}$Sr$_{x}$MnO$_{3}$ ($x$ = 0; 0.15; 0.25)
   
   Fizika Tverdogo Tela, 63:4 (2021),  465–470
2. Phase diagram and thermodynamic equilibrium in the Fe$_x$TiSe$_2$ system
   
   Fizika Tverdogo Tela, 54:3 (2012),  585–587
3. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе
   
   Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
4. Получение МОС гидридным методом при пониженном давлении и фотолюминесцентные исследования GaAs/AlGaAs квантово-размерных структур
   
   Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1420–1425
5. FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1217–1220
6. STUDY OF GAAS-ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  222–226
7. Effect of Doping Level on Electrophysical Properties of Al$_{0.3}$Ga$_{0.7}$As : Si Solid Solution
   
   Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  754–756
8. FAST-RESPONSE HIGH-POWER OPTOELECTRONIC SWITCHING
   
   Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986),  577–579
9. Study of the Nature of Acceptor Impurities in Pure GaAs Epitaxial Layers Produced by the MOC Hydride Method
   
   Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2163–2168
10. Deep Donor Level of Si in Al$_{x}$Ga$_{1-x}$As Solid Solutions Produced from a Gas Phase
    
    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1919–1921
11. Low Rate of Surface Recombination (${S =10^{4}}\,cm/s$) in Epitaxial $n$-Туре GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1826–1829
12. Investigation of multi-layered $Ga\,As-Al\,Ga\,As$ structures on inclined cross-sections, made by the chemical etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  21–24
13. THIN-FILM ALGAAS HETEROPHOTOELEMENTS WITH A REMOVED GAAS BASE
    
    Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1215–1218
14. Высокоэффективные $p$AlGaAs${-}p$GaAs${-}n$GaAs солнечные фотоэлементы с КПД 19% (AM 0) и 24% (AM 1.5)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1251–1254