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Stus Nikolay Matveevich

Publications in Math-Net.Ru

  1. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths

    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
  2. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
  3. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
  4. Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes

    Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  52–57
  5. $P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1394–1397
  6. Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  45–52
  7. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C

    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  708–713
  8. Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 5.2 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  258–261
  9. Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  85–90
  10. Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  554–559
  11. Sulphide passivation of indium-arsenide surface

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1742–1749
  12. Transition from heterostructures of the first type to heterostructures of the second type in the InAs/InAsSbP system

    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  738–741
  13. Nature of threshold current-density temperature dependence for long-wavelenght lasers based on InAsSbP/InAs and InAsSbP/InAsSb double heterostructures

    Fizika i Tekhnika Poluprovodnikov, 26:2 (1992),  246–256
  14. Поляризация фотолюминесценции с поверхности гетероструктуры A$^{\text{III}}$B$^{\text{V}}$ с профилированной подложкой

    Fizika i Tekhnika Poluprovodnikov, 25:1 (1991),  12–16
  15. INASSBP-BASED LIGHT DIODES USED IN SMALL-SCALE ANALYZERS OF CARBON OXIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991),  75–79
  16. Structural perfection of $\mathrm{InAs}_{1-x-y}\mathrm{Sb}_{x}\mathrm{P}_{y}$–$\mathrm{InAs}$ double heterostructures

    Fizika Tverdogo Tela, 32:11 (1990),  3355–3361
  17. Температурная зависимость люминесценции арсенида индия и твердых растворов InAsSbP и InGaAs

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  592–596
  18. LOW-THRESHOLD LASERS OF 3-3,5 MU-M BASED ON DHS INASSBP/IN1-XGAXAS1-YSBY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  49–52
  19. Катодолюминесценция градиентных эпитаксиальных структур InAsSbP/InAs

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1244–1247
  20. О механизмах рекомбинации носителей тока в $p$-InAs$_{1-x-y}$Sb$_{x}$P$_{y}$

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  789–792
  21. A PROFILE OF THE DEFORMATION IN GRADIENT STRUCTURES OF INAS1-X-YSBXY/INAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988),  2044–2048
  22. STIMULATED EMISSION (3-3.3 MU-M, 77-K) UNDER THE CURRENT INJECTION IN PLASTICALLY DEFORMED DHS INASSBP/INAS LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1617–1621
  23. MANIFESTATION OF BOUNDARY DISTORTIONS ON X-RAY TOPOGRAMS OF GAASSBP-GAAS CURVED STRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  2000–2004
  24. Photoluminescence of Plastically Deformed $p$-Type GaSb

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1914–1915
  25. Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As (${0 < x < 0.23}$)

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1079–1084
  26. Injection coherent emission in $In\,As\,Sb\,P/In\,As/In\,As\,Sb\,P$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  563–565
  27. Temperature-dependence of parameters of stimulated radiation in R-P structures based on $In\,As_{1-x}\,Sb_{x}$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  329–331
  28. Dislocation distribution in bended $\mathrm{InAsSbP}/\mathrm{InAs}$ structures

    Fizika Tverdogo Tela, 28:3 (1986),  789–792
  29. On the Electrophysical and Photoelectrical Properties of InAs$_{1-x-y}$Sb$_{x}$P$_{y}$Based Eреtaxial Diode Structures

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2195–2198
  30. Nonclassical Thermoinjection Current in InAsSbP/lnAs $p{-}n$ Structures

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  762–765
  31. Coherent irradiation of 3,9-mu-m in R-P structures based on $Jn\,As\,Sb\,P$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1444–1447
  32. Peculiarities of Luminescence of Plastically Deformed InAsSbP/InAs Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  2031–2035
  33. Concave diffraction lattices on the monocrystal surface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1172–1175
  34. Поляризация люминесценции эпитаксиальных слоев твердых растворов InAs$_{1-x-y}$Sb$_{x}$P$_{y}$

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1795–1798
  35. Collision-Ionization Coefficients of Electrons and Holes in Narrow-B and Solid Solutions Based on InAs

    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  545–547
  36. X-RAY-DIFFRACTION ON THE PLASTIC DEFORMED EPITAXIAL HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1297–1301
  37. Полевое гашение поверхностной проводимости и двумерная прыжковая проводимость в $p$-InAs

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  422–425

© Steklov Math. Inst. of RAS, 2026