Nikitina Irina Petrovna

Publications in Math-Net.Ru

1. Gettering effect in Cr/4$H$-SiC UV photodetectors under ptoton irradiation vith $E$ = 15 Mev
   
   Zhurnal Tekhnicheskoi Fiziki, 93:4 (2023),  562–567
2. Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1094–1098
3. Irradiation with argon ions of Cr/4H-SiC-photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  254–258
4. Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  225–228
5. Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1368–1373
6. Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1244–1248
7. Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  195–201
8. Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  856–861
9. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
10. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
11. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000
12. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  549–552
13. SIC-ALN SOLID-SOLUTIONS GROWN BY THE LIQUID EPITAXY ON SIC-6H SUBSTRATES
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  50–53
14. COMPOSITION STOICHIOMETRY IN GAAS FILMS GROWN BY THE GAS-PHASE EPITAXY METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 60:11 (1990),  201–203
15. Низкотемпературная фотолюминесценция эпитаксиальных пленок фосфида галлия, выращенных на кремниевых подложках
    
    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1303–1305
16. PHOTOELECTRIC AND STRUCTURAL-PROPERTIES OF BI12GEO20 AND BI12SIO20 MONOCRYSTAL SURFACE
    
    Zhurnal Tekhnicheskoi Fiziki, 59:12 (1989),  107–110
17. CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT 1050-1250-DEGREES-C
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  50–52
18. EFFECT OF NEUTRON-IRRADIATION ON STRUCTURAL DEFECTS IN CRUCIBLELESS SILICON
    
    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1591–1593
19. STUDY OF OPTICAL WAVE-GUIDE STRUCTURES BASED ON MONOCRYSTAL SILLENITE FILMS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1555–1560
20. PRODUCTION AND SOME PROPERTIES OF PIEZOELECTRIC LAYERED ZNO-LINBO3 AND ZNO-BI12SIO20 STRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  396–399