|
|
Publications in Math-Net.Ru
-
Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 28–31
-
Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 36–38
-
SmS/SiC heterostructure and its associated thermovoltaic effect
Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 212–213
-
Polytype inclusions and polytype stability in silicon-carbide crystals
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 501–508
-
Growth of 4H silicon carbide crystals on a $(11\bar22)$ seed
Fizika i Tekhnika Poluprovodnikov, 46:10 (2012), 1368–1373
-
Mechanisms of defect formation in ingots of 4H silicon carbide polytype
Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 289–294
-
PRODUCTION AND SOME PROPERTIES OF PIEZOELECTRIC LAYERED ZNO-LINBO3 AND
ZNO-BI12SIO20 STRUCTURES
Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986), 396–399
© , 2026