Vlasenko Leonid Sergeyevich

Publications in Math-Net.Ru

1. Detection of paramagnetic recombination centers on the surface of silicon wafers
   
   Fizika i Tekhnika Poluprovodnikov, 58:5 (2024),  256–262
2. Identification of paramagnetic spin dependent recombination centers on surface of silicon wafers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:9 (2024),  3–5
3. ESR of the excited divacancy triplet state in silicon
   
   Fizika Tverdogo Tela, 33:8 (1991),  2357–2362
4. Magnetization and RF absorption in $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7-\delta}$
   
   Fizika Tverdogo Tela, 31:7 (1989),  268–270
5. Properties of high pressure deformed silicon crystals
   
   Fizika Tverdogo Tela, 29:5 (1987),  1486–1491
6. Characteristics of microwave-power absorption in $Y-Ba-Cu-O$ compounds in a magnetic-field
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:23 (1987),  1435–1439
7. New paramagnetic centers in nickel-alloyed silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987),  1322–1326
8. Study of dislocation dangling bond annealing in silicon by optical polarization of the nuclear moment technique
   
   Fizika Tverdogo Tela, 28:4 (1986),  1190–1193
9. Optical polarization of nuclear moments in silicon with one-dimensional defects
   
   Fizika Tverdogo Tela, 28:2 (1986),  634–637
10. Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 20:6 (1986),  1093–1099
11. SOLID GOLD SOLUTION DECAY IN SILICON .2. DATA ON NUCLEAR MOMENT OPTICAL POLARIZATION STUDY
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2162–2169
12. SOLID GOLD SOLUTION DECAY IN SILICON .1. DATA ON NUCLEAR-SPIN-LATTICE RELAXATION STUDY
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2149–2161
13. Electron-paramagnetic-res method of surface recombination centers in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  909–912
14. Electron-paramagnetic-res study of $\mathrm{Si}$–$\mathrm{S}1$ center optical excitation and relaxation in irradiated silicon
    
    Fizika Tverdogo Tela, 26:1 (1984),  114–119
15. POSSIBILITIES OF INCREASING THERMAL-STABILITY OF SINGLE-CRYSTAL SILICON FOR HIGH-POWER SEMICONDUCTOR-DEVICES
    
    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  917–928
16. THERMAL-STABILITY OF SILICON, ALLOYED BY REE ADMIXTURES DURING GROWTH BY THE CHOKHRALSKII METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984),  207–208
17. Effect of Rare-Earth Elements on Carrier Mobility in InP and InGaAs Epitaxial Layers
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  83–85
18. ANISOTROPY OF THE NUCLEAR OPTICAL POLARIZATION AND ELECTRON-PARAMAGNETIC-RES IN THE IRRADIATED SILICON
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:24 (1984),  1529–1533
19. OBSERVATION OF THE NUCLEAR MAGNETIC-RESONANCE OF SI-29 NUCLEUS PAIRS IN SILICON-CRYSTALS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:18 (1984),  1102–1106
20. SUPERHIGH-VOLT P-N-JUNCTIONS BASED ON NEUTRON-ALLOYED SILICON, CONTAINING RARE-EARTH ELEMENTS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  880–882
21. Скопления электрически активных центров в термообработанном кремнии, выращенном по методу Чохральского
    
    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1979–1984
22. Распад твердого раствора золота в бездислокационном кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  276–280
23. Детектирование оптической поляризации ядер в полупроводниках сверхпроводящим квантовым интерферометром
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983),  1377–1381