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Bagraev Nikolay Teymurazovich

Publications in Math-Net.Ru

  1. Magnetism of hybrid SiC/Si structures synthesized by the method of vacancy-coordinated substitution of atoms

    Fizika Tverdogo Tela, 67:8 (2025),  1573–1577
  2. Nano-electromagnets based on hybrid SiC/Si nanostructures

    Fizika Tverdogo Tela, 67:8 (2025),  1432–1436
  3. Magnetic susceptibility SiC/Si hybrid structures synthesized by the method of coordinated substitution of atoms

    Fizika Tverdogo Tela, 67:4 (2025),  624–634
  4. Andreev terahertz irradiation generators

    Fizika Tverdogo Tela, 66:11 (2024),  2052–2058
  5. Express diagnostics of DNA oligonucleotides

    Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024),  1597–1602
  6. Macroscopic quantum phenomena under conditions of deposition of DNA oligonucleotides into the edge channels of a silicon nanosandwich structure

    Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024),  1588–1596
  7. Control of the blood oxygenation process under the effect of THz radiation

    Zhurnal Tekhnicheskoi Fiziki, 94:9 (2024),  1583–1587
  8. Using terahertz irradiation to mitigate the effects of radiation exposure

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  1087–1094
  9. Magnetic properties of edge channels of silicon nanosandwich structures with deposited DNA oligonucleotides

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  963–967
  10. Therapy of covid complications with terahertz irradiation

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  943–950
  11. Terahertz express diagnostics of complications caused by COVID-19

    Zhurnal Tekhnicheskoi Fiziki, 92:7 (2022),  939–942
  12. Phase transitions in silicon carbide epitaxial layers grown on a silicon substrate by the method of coordinated substitution of atoms

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  715–718
  13. Registration of terahertz radiation with silicon carbide nanostructures

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1195–1202
  14. Terahertz emission from silicon carbide nanostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1027–1033
  15. Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  103–111
  16. Terahertz radiation sources and detectors based on optical microcavities embedded in the edge channels of silicon nanosandwiches

    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1663–1671
  17. Terahertz response of biological tissue for diagnostic and treatment in personalized medicine

    Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020),  1502–1505
  18. Description of the magnetization oscillations of a silicon nanostructure in weak fields at room temperature. the Lifshitz–Kosevich formula with variable effective carrier mass

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1331–1335
  19. Thermodynamic description of oscillations of the magnetization of a silicon nanostructure in weak fields at room temperature. Density of states

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1651–1654
  20. De Haas–van Alphen oscillations of the silicon nanostructure in weak magnetic fields at room temperature. Density of states

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1647–1650
  21. Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  512
  22. High temperature quantum kinetic effects in silicon nanosandwiches

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  473
  23. Formation of three-dimensional arrays of magnetic clusters NiO, Co$_{3}$O$_{4}$, and NiCo$_{2}$O$_{4}$ by the matrix method

    Fizika Tverdogo Tela, 58:6 (2016),  1176–1181
  24. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1353–1357
  25. Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1230–1237
  26. Room temperature de Haas–van Alphen effect in silicon nanosandwiches

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1047–1054
  27. Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  474–484
  28. Defect-related luminescence in silicon $p^+$–$n$ junctions

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1258–1261
  29. DNA detection by THz pumping

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  966–970
  30. Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  663–671
  31. Conductance matrix of multiterminal semiconductor devices with edge channels

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1676–1685
  32. Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on $n$-Si (100)

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1646–1653
  33. Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1549–1554
  34. Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1503–1516
  35. Features of the electroluminescence spectra of quantum-confined silicon $p^+$–$n$ heterojunctions in the infrared spectral region

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1530–1535
  36. On the electrically detected cyclotron resonance of holes in silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  503–509
  37. Infrared luminescence from silicon nanostructures heavily doped with boron

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  289–303
  38. Formation of (Ga,Mn)As nanowires and study of their magnetic properties

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  188–193
  39. The de Haas-van Alphen effect in nanostructures of cadmium fluoride

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  90–95
  40. Spin interference of holes in silicon nanosandwiches

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  77–89
  41. Landau–Zener effect for a quasi-2D periodic sandwich

    Nanosystems: Physics, Chemistry, Mathematics, 2:4 (2011),  32–50
  42. Shubnikov–de-Haas and de-Haas–van-Alphen oscillations in silicon nanostructures

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1503–1508
  43. Quantum spin Hall effect in nanostructures based on cadmium fluoride

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1372–1381
  44. Metastable optical polarization of nuclear moments in silicon

    Fizika Tverdogo Tela, 34:6 (1992),  1949–1952
  45. Metastability of the $\mathrm{Mn}$ center in silicon

    Fizika Tverdogo Tela, 34:3 (1992),  870–878
  46. Gettering in silicon under vacancy generation

    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1004–1007
  47. Si$_{1-x}$Ge$_{x}$ self-compensation of zinc double aceptors in silicon–germanium solid solution

    Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  836–838
  48. Zinc in silicon: photoinduced reactions

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  481–490
  49. Metastability of manganese cnters in silicon–germanium solid solutions

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  427–430
  50. Туннельные эффекты в двумерной кремниевой транзисторной структуре

    Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1613–1617
  51. Фрактально-диффузионные $p{-}n$-переходы в кремнии

    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  644–654
  52. TUNNEL EFFECTS IN QUANTUM-DIMENSIONAL SILICON TRANSISTOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  42–46
  53. Magnetic properties of single crystal $\alpha$-$\mathrm{LiIO}_{3}$ containing rare-earth ions

    Fizika Tverdogo Tela, 32:9 (1990),  2814–2816
  54. Генерация и отжиг дефектов при совмещенном геттерировании в кремнии $n$-типа. II. Точечные дефекты, индуцированные геттерирующими микродефектами

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1563–1573
  55. Генерация и отжиг дефектов при совмещенном генерировании в кремнии $n$-типа. I. Геттерирующие микродефекты

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1557–1562
  56. Реакции центров железа, индуцированные пиннингом уровня Ферми в кремнии $p$-типа

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1643–1645
  57. Оптическая самокомпенсация донорных центров железа в кремнии

    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1098–1100
  58. Реакции центров золота с отрицательной корреляционной энергией в твердых растворах Si$-$Ge

    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  525–531
  59. Self-compensation of iron centers in silicon under optical pumping

    Fizika Tverdogo Tela, 30:7 (1988),  2076–2084
  60. METASTABILITY OF PHOTOEMISSION FROM WITH NEGATIVE ELECTRON-AFFINITY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  329–334
  61. Study of the effect of oxides and polycrystal layers on the carrier life-span in monocrystal silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1025–1029
  62. Study of dislocation dangling bond annealing in silicon by optical polarization of the nuclear moment technique

    Fizika Tverdogo Tela, 28:4 (1986),  1190–1193
  63. Optical polarization of nuclear moments in silicon with one-dimensional defects

    Fizika Tverdogo Tela, 28:2 (1986),  634–637
  64. Reactions of Gold Centers under Optical Pumping of Silicon–Germanium Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  745–747
  65. SOLID GOLD SOLUTION DECAY IN SILICON .2. DATA ON NUCLEAR MOMENT OPTICAL POLARIZATION STUDY

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2162–2169
  66. SOLID GOLD SOLUTION DECAY IN SILICON .1. DATA ON NUCLEAR-SPIN-LATTICE RELAXATION STUDY

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2149–2161
  67. FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF OBTAINING PLANAR SILICON P-N-JUNCTIONS

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2064–2066
  68. Semiconductor–Dielectric Transition in Lightly Doped Thermally Treated Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  611–615
  69. Spin-dependent negative photo-conductivity in silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985),  568–573
  70. Suppression of natural acceptors in $Ga\,Sb$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985),  117–121
  71. POSSIBILITIES OF INCREASING THERMAL-STABILITY OF SINGLE-CRYSTAL SILICON FOR HIGH-POWER SEMICONDUCTOR-DEVICES

    Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984),  917–928
  72. THERMAL-STABILITY OF SILICON, ALLOYED BY REE ADMIXTURES DURING GROWTH BY THE CHOKHRALSKII METHOD

    Zhurnal Tekhnicheskoi Fiziki, 54:1 (1984),  207–208
  73. Effect of Rare-Earth Elements on Carrier Mobility in InP and InGaAs Epitaxial Layers

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  83–85
  74. SUPERHIGH-VOLT P-N-JUNCTIONS BASED ON NEUTRON-ALLOYED SILICON, CONTAINING RARE-EARTH ELEMENTS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  880–882
  75. Скопления электрически активных центров в термообработанном кремнии, выращенном по методу Чохральского

    Fizika i Tekhnika Poluprovodnikov, 17:11 (1983),  1979–1984
  76. Распад твердого раствора золота в бездислокационном кремнии

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  276–280

© Steklov Math. Inst. of RAS, 2026