Pogrebickii K Yu

Publications in Math-Net.Ru

1. New technique for EXAFS data processing and its application
   
   Zhurnal Tekhnicheskoi Fiziki, 81:9 (2011),  134–139
2. Innovations in X-ray-induced electron emission spectroscopy (XIEES)
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  753–758
3. PRINCIPLES OF GAAS(001) SPUTTERING BY AR+ IONS WITH 1-9 KEV ENERGY
   
   Zhurnal Tekhnicheskoi Fiziki, 62:4 (1992),  162–170
4. CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM
   
   Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  123–128
5. EXPERIMENTAL JUSTIFICATION OF A RELAXATION LIQUID EPITAXY MODEL WITH MASS-TRANSFER INVERSION DESIGNED FOR THE FORMATION OF SUPERFINE A3B5 LAYERS
   
   Zhurnal Tekhnicheskoi Fiziki, 60:1 (1990),  165–169
6. Изучение переходной области между эпитаксиальными слоями InP и In$_{0.53}$Ga$_{0.47}$As в гетероструктурах с 2МЭГ
   
   Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1026–1030
7. Влияние толщины верхнего узкозонного слоя на концентрацию двумерных электронов в инвертированных гетероструктурах InP/In$_{0.53}$Ga$_{0.47}$As
   
   Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  653–659
8. CHANGE OF GALLIUM-ARSENIDE COMPOSITION IN THE VICINITY OF SURFACE UNDER AR+-ION BOMBARDMENT
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988),  673–676
9. LIQUID-PHASE ALGAAS-STRUCTURES WITH QUANTUM-DIMENTIONAL LAYERS OF THE APPROXIMATELY-20A WIDTH
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  171–176
10. Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures Produced by MOC Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1745–1749
11. Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  132–136
12. X-Ray Photoemission Studies of Liquid-Phase InGaAsP Heterostructures with Transient-Layer Extent of ${\leqslant20}$ Å
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2206–2211
13. $Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1089–1093
14. Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  533–537