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Publications in Math-Net.Ru
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Effect of photocurrent amplification in semiconductor–tunnelly transparent dielectric–semiconductor structures
Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 295–304
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Current–voltage and capacity–voltage characteristics of silicon semiconductor–dielectric–semiconductor structures with dielectric of thickness less than 50 Angströms
Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 146–149
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kinetics of silicon oxidation and structure of oxide layers of thickness less than 50 Angströms
Fizika i Tekhnika Poluprovodnikov, 26:1 (1992), 111–121
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Current passage through a tunneling-transparent insulator
Fizika Tverdogo Tela, 33:6 (1991), 1784–1791
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PHOTODIODES IN ANISOTYPIC SILICON PDP STRUCTURES
Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 810–812
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Kinetics of Photoresponse and Mechanism of Current Flow in Silicon Structures of Semiconductor–Thin Dielectric–Semiconductor
Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1444–1450
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Photocurrent intensification in the semiconductor-dielectric-semiconductor structures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986), 520–524
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Кинетика фотоответа туннельных МДП структур
Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1471–1477
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Особенности фотоэлектрических свойств туннельных МДП-структур
с поликремниевым затвором
Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:3 (1983), 150–154
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