Titkov Alexandr Nikolaevich

Publications in Math-Net.Ru

1. Formation of stable charge regions in an array of germanium nanocrystallites inside SiO$_2$ using electrostatic force microscopy
   
   Zhurnal Tekhnicheskoi Fiziki, 85:5 (2015),  50–56
2. Charge carrier accumulation and relaxation effects in the active region of polymer and composite (polymer-gold nanoparticles) field-effect transistor structures
   
   Fizika Tverdogo Tela, 56:5 (2014),  1015–1018
3. Behavior of charges locally injected into nanothin high-k SmScO$_3$ dielectric
   
   Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  122–126
4. Behavior of locally injected charges in high-k nanolayers of LaScO$_3$ insulator on a Si substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:9 (2013),  47–55
5. Charge accumulation on the surface of GaAs nanowires near the Schottky contact
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013),  53–60
6. Measurement of Young’s modulus of GaAs nanowires growing obliquely on a substrate
   
   Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  659–664
7. Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation
   
   Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  634–638
8. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
9. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer
   
   Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  636–641
10. Studying electric field profiles in GaAs-based detector structures by Kelvin probe force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  95–101
11. LOW ACCEPTOR MANGANESE LEVEL IN GALLIUM ANTIMONIDE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991),  21–24
12. CHARACTERISTICS OF ELECTRON-OPTICAL ORIENTATION IN HG1-XMNXTE AND HG1-XCDXTE ALLOYS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  32–35
13. Природа спонтанной электролюминесценции гетероструктур II-типа GalnAsSb/GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1056–1061
14. LIFETIME OF NONEQUILIBRIUM CHARGE-CARRIERS IN PROTON-IRRADIATED GAAS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  89–93
15. Время жизни неравновесных носителей заряда в $p$-GaAs, облученном ионами кислорода
    
    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  352–354
16. Спиновое расщепление зон и спиновая релаксация носителей в кубических кристаллах $A^{\mathrm{III}}B^{\mathrm{V}}$
    
    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  185–200
17. Intraband Absorption of $p$-Type Gallium Antimonide
    
    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  80–83
18. Effect of Disagreement between E$_g$ and $\Delta_{0}$ Band Parameters on the Rate of Interband Auger Recombination in $p$-Type Ga$_{1-x}$In$_{x}$Sb
    
    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  495–498
19. Spin Splitting of the Conduction Band in InP
    
    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  347–350
20. Interband Auger Recombination with Participation of Spin-Orbitally Splittedout Valence Band in $p$-Type GaSb Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  25–34
21. Optical orientation in stressed semiconductor crystals at arbitraty stress
    
    Fizika Tverdogo Tela, 27:5 (1985),  1423–1428
22. Mobility of Excess Electrons in $p$-Type GaAs Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  118–122
23. Impurity Auger-Recombination in $n$-Tupe GaSb
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  750–752
24. Electron spin relaxation in moderately doped $\mathrm{GaAs}$ crystals
    
    Fizika Tverdogo Tela, 25:12 (1983),  3537–3542