Sinicin Mikhail Alekseevich

Publications in Math-Net.Ru

1. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
2. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
3. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
4. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
5. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
6. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
   
   Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
7. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
   
   Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
8. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
   
   Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
9. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе
   
   Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
10. Определение электрофизических параметров тонких гетероэпитаксиальных слоев в растровом электронном микроскопе (эксперимент)
    
    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1416–1419
11. OXIDE-BAND AND OVERGROWN ALGAAS/GAAS QUANTUM-DIMENSIONAL LASERS, MANUFACTURED BY THE MOC-HYDRIDE EPITAXY METHOD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  20–25
12. Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные МОС гидридным методом. Квантовый выход люминесценции и пороги генерации
    
    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2111–2117
13. FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1217–1220
14. STUDY OF GAAS-ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  222–226
15. CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  778–782
16. Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures Produced by MOC Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1745–1749
17. Mechanism of Photocurrent Amplification in GaAs–AlGaAs Structures
    
    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1327–1329
18. Effect of Doping Level on Electrophysical Properties of Al$_{0.3}$Ga$_{0.7}$As : Si Solid Solution
    
    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  754–756
19. $N$-Type Current–Voltage Characteristic under Electroabsorption in a Double Heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  703–706
20. Mechanism of the $S$-Type Current-Voltage Characteristic in a Multilayer Isotype GaAs$-$AlGaAs Heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  494–499
21. ANALYSIS OF NONSTATIONARY PHENOMENA IN THE REACTOR VOLUME DURING THE AL-GA-AS STRUCTURE GROWING PROCESS WITH SHARP MOC HETEROTRANSITIONS BY THE HYDRIDE METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  361–366
22. Study of the Nature of Acceptor Impurities in Pure GaAs Epitaxial Layers Produced by the MOC Hydride Method
    
    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2163–2168
23. Deep Donor Level of Si in Al$_{x}$Ga$_{1-x}$As Solid Solutions Produced from a Gas Phase
    
    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1919–1921
24. Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986),  577–582
25. Investigation of factors, determining the thickness homogeneity of gallium-arsenide epitaxial layers in the $Ga(CH_{3})_{3}-As\,H_{3}-H_{2}$ system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986),  506–509
26. Investigation of multi-layered $Ga\,As-Al\,Ga\,As$ structures on inclined cross-sections, made by the chemical etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  21–24
27. Электрофизические характеристики метастабильных твердых растворов (Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки
    
    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1438–1445