Pushnii Boris Vasil'evich

Publications in Math-Net.Ru

1. Optical characterization of InGaAsP/InP(001) heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  47–50
2. Development of the technology for production power laser conventers on wavelength 1.06 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  590–593
3. Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  932–936
4. Replacing tunnel junctions in InP with conduction channels with GaP crystallites
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  52–54
5. Smoothing the surface of gallium antimonide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
6. Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  13–14
7. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
8. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
9. High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1599–1603
10. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
11. On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276
12. GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1641–1646
13. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
14. Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  25–31
15. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
16. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
17. GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1358–1362
18. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  79–84
19. Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  715–718
20. Study of postgrowth processing in the fabrication of quantum-cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1132–1137
21. Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1677–1680
22. Preparation of a strip structure for quantum-cascade lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  32–37
23. AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 $\mu$m spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  66–74
24. Properties of narrow-bandgap (0.3–0.48 eV) A$^3$B$^5$ solid solution epilayers grown by metal-organic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  23–30
25. KINETICS OF PHOTOGRAPHIC FLOW IN ARSENIDE-GALLIUM STRUCTURES WITH THE BUILT-IN POTENTIAL BARRIER
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1565–1570
26. Injection heterolasers $Jn\,Ga\,As\,P/Jn\,P$ ($\lambda=1,5$-mu-m) with the distributed feedback obtained by liquid-phase and gaseous epitaxies
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  296–300
27. Effect of Rare-Earth Elements on Carrier Mobility in InP and InGaAs Epitaxial Layers
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  83–85
28. Торцевые суперкороткие AlGaAs-излучатели с ${\eta_{e}\approx10}$% (${T=300^{\circ}}$ K)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  900–906


29. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476