Tairov Yu M

Publications in Math-Net.Ru

1. Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  791–793
2. Polytype inclusions and polytype stability in silicon-carbide crystals
   
   Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  501–508
3. Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors
   
   Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1431–1434
4. Growth of 4H silicon carbide crystals on a $(11\bar22)$ seed
   
   Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1368–1373
5. Mechanisms of defect formation in ingots of 4H silicon carbide polytype
   
   Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  289–294
6. Широкозонные твердые растворы (SiC)$_{1-x}$(AlN)$_{x}$
   
   Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1437–1447
7. STUDY OF SOLUBILITY AND DIFFUSION IN SIC-NBC, SIC-TIC, SIC-ZRC SYSTEMS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991),  80–83
8. Получение аморфных гидрогенизированных широкозонных полупроводников $a$-Si$_{1-x}$C$_{x}$ : H в реакторе с вынесенной подложкой
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:16 (1991),  46–49
9. Влияние отклонения от стехиометрии на свойства диффузионных $p{-}n$-переходов на основе карбида кремния
   
   Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  821–824
10. Теплопроводность карбида кремния в области температур 300$-$3000 K
    
    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  258–263
11. Политипный фазовый переход, индуцированный ионной имплантацией
    
    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2240–2243
12. Оптическое поглощение и люминесценция твердых растворов (SiC)$_{1-x}$(AlN)$_{x}$
    
    Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  162–164
13. Электрические характеристики эпитаксиальных $p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$
    
    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  298–300
14. Experimental observation of thermomechanically induced nonequillibrium phase transitions in $\mathrm{SiC}$
    
    Fizika Tverdogo Tela, 29:2 (1987),  575–577
15. Impurity Optical Absorption and Energy Structure of Donor $1s$ States in $4H$-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  194–197
16. Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987),  1168–1171
17. Electron paramagnetic res of $(\mathrm{TiN})^{0}$ impurity pairs in $\mathrm{6H}$ polytype of $\mathrm{SiC}$
    
    Fizika Tverdogo Tela, 28:2 (1986),  363–368
18. Production and investigation of epitaxial layers of wide-range solid $(Si\,C)_{1-x}(Al\,N)_{x}$ solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:17 (1986),  1043–1045
19. Simplification of $\mathrm{6H}$–$Si\,C$ crystal-lattice during alloying by isovalent admixtures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  749–752
20. $\mathrm{SiC}$ layer structure reduction after ion implantation
    
    Fizika Tverdogo Tela, 26:5 (1984),  1575–1577
21. EVOLUTION REGULARITY OF CRYSTAL-STRUCTURES DURING THE SYNTHESIS OF SUBSTANCES, CONTAINING A GREAT DEAL OF STRUCTURALLY STABLE CONDITIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1388–1390
22. Luminescence of Silicon Carbide Due to Deviations from Stoichiometry
    
    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1194–1198
23. PROPERTIES OF P-LAYERS OF THE ION-ALLOYED SILICON-CARBIDE, FORMED BY THE LASER-EMISSION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:24 (1984),  1527–1529
24. HETEROEPITAXIAL COMPOSITION - UNUSUAL POLYTYPE OF H-2 SILICON-CARBIDE ON ISOLATED SUBSTRATES - ALUMINUM-SAPPHIRE NITRIDE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  873–876
25. Оценка важнейших электрофизических параметров твердых растворов карбид кремния-нитриды A$^{\text{III}}$B$^{\text{V}}$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:12 (1983),  737–741