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Chaldyshev Vladimir Victorovich

Publications in Math-Net.Ru

  1. Resonant reflection of light from a periodic system of quasi-two-dimensional layers of Bi nanoparticles in GaAs

    Fizika Tverdogo Tela, 67:11 (2025),  2203–2207
  2. Bragg resonance in the system of layers of plasmonic Bi nanoparticles in GaAs matrix

    Fizika Tverdogo Tela, 67:1 (2025),  39–43
  3. Formation of quasi-two-dimensional layers of bismuth nanoparticles in epitaxial layers of gallium arsenide

    Fizika Tverdogo Tela, 66:9 (2024),  1514–1519
  4. Effect of disorder on the optical properties of resonant Bragg structures based on III–N

    Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  594–600
  5. Microstructure features of nanosized AsSb precipitates in LT-GaAsSb

    Fizika Tverdogo Tela, 65:12 (2023),  2309–2316
  6. Influence of intermediate low-temperature heating on precipitation in nonstoichiometric GaAs

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  507–512
  7. Structure and optical properties of a composite AsSb–Al$_{0.6}$Ga$_{0.4}$As$_{0.97}$Sb$_{0.03}$ metamaterial

    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  71–76
  8. Growth of GaAs$_{1-x}$Bi$_x$ layers by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  279–284
  9. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
  10. Charge carrier localization in InAs self-organized quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  51–54
  11. Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles

    Optics and Spectroscopy, 126:5 (2019),  573–577
  12. Diffusion blurring of GaAs quantum wells grown at low temperature

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1597–1600
  13. Resonant optical reflection from AsSb–AlGaAs metamaterials and structures

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  471
  14. Optical properties of AlGaAs/GaAs resonant Bragg structure at the second quantum state

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  466
  15. Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1620–1624
  16. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1519–1526
  17. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
  18. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1710–1713
  19. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1635–1639
  20. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1448–1452
  21. Optical lattices of excitons in InGaN/GaN quantum well systems

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  6–10
  22. Fröhlich resonance in the AsSb/AlGaAs system

    Fizika Tverdogo Tela, 56:10 (2014),  1891–1895
  23. Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix

    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1578–1582
  24. Measuring femtosecond lifetimes of free charge carriers in gallium arsenide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:12 (2014),  37–43
  25. Resonance Bragg structure with double InGaN quantum wells

    Fizika Tverdogo Tela, 55:9 (2013),  1706–1708
  26. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1196–1203
  27. Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1144–1148
  28. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1043–1047
  29. Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1314–1318
  30. Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1039–1042
  31. Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  637–640
  32. Elastic fields and physical properties of surface quantum dots

    Fizika Tverdogo Tela, 53:10 (2011),  1986–1996
  33. Electron microscopy of GaAs Structures with InAs and as quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1642–1645
  34. An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells

    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1260–1265
  35. Isovalent doping of indium phosphide by gallium and arsenic during liquid epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1737–1741
  36. Electric and photoluminescent properties of $\text{GaSb}\langle\text{Bi}\rangle$ and $\text{GaSb}\langle\text{Bi,Sn}\rangle$ epitaxial layers produced from bismuth solutions

    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1409–1414
  37. USE OF ELECTROLIQUID EPITAXY FOR THE GROWING VOLUME CRYSTALS AND SIMULTANEOUS PREPARATION OF LAYERS ON SEVERAL SUBSTRATES

    Zhurnal Tekhnicheskoi Fiziki, 61:3 (1991),  74–79
  38. Комбинационное рассеяние в эпитаксиальных пленках GaAs, легированных изовалентными примесями Bi и In: влияние дефектов и затухание плазмофонона

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1472–1475
  39. Совместная имплантация в полуизолирующий арсенид галлия электрически активной и изовалентной примесей

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1355–1360
  40. Влияние изовалентного легирования индием на свойства эпитаксиальных слоев арсенида галлия, выращенного из газовой фазы

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  898–903
  41. О механизме воздействия изовалентной примеси In на свойства и ансамбль дефектов GaAs, выращиваемого методом молекулярно-лучевой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1862–1866
  42. Полоса фотолюминесценции 1.44 эВ в GaAs, имплантированном азотом и кремнием

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1857–1861
  43. Подавление «природных» акцепторов в GaSb путем изовалентного легирования висмутом

    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1095–1100
  44. Особенности поведения изовалентной примеси — индия при легировании арсенида галлия в процессе газофазовой эпитаксии из металлоорганических соединений

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  77–81
  45. DOUBLE ISOVALENT ALLOYING OF GALLIUM-ARSENIDE BY BISMUTH AND INDIUM

    Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989),  164–167
  46. Влияние отношения потоков мышьяка и галлия на люминесценцию арсенида галлия, полученного методом молекулярно-лучевой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1913–1916
  47. Ширина запрещенной зоны в твердом растворе GaSb$_{1-x}$Bi$_{x}$

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1517–1518
  48. Влияние легирования индием на люминесценцию монокристаллов арсенида галлия

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1259–1262
  49. Об одной особенности донора — серы в GaP

    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1070–1075
  50. Люминесценция глубоких уровней в $n$-GaAs : Ge, Bi

    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  221–223
  51. Амфотерные свойства германия в GaAs : Bi

    Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  44–47
  52. Зависимость ширины запрещенной зоны от состава в твердом растворе InP$_{1-x}$Sb$_{x}$ (${x\leqslant 0.07}$)

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  342–344
  53. SOLID-SOLUTIONS IN THE GA-SB-BI SYSTEMS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1651–1655
  54. Mechanism of «Purification» of Gallium Arsenide by Bismuth

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2201–2209
  55. Effect of Isovalent Indium-Doping on «Natural» Acceptors in Gallium Antimonide

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1118–1124
  56. Effect of Isovalent Bismuth Doping on Shallow-Acceptor Concentration in Gallium Arsenide

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  949–952
  57. Photoluminescence of germanium-alloyed and bismuth-alloyed $Ga\,As$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1264–1267
  58. Compensation of radical admixtures in epitaxial layers of $Ga\,As:Bi$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1255–1259
  59. Nea photocathodes based on $Ga\,As_{1-x}\,Sb_{x}$ solid-solutions – their application in photomultipliers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987),  833–835
  60. Solid-solution in the indium phosphide–indium antimonide system

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  188–191
  61. Photoluminescence of Bismuth-Doped InP

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1258–1261
  62. The purification of gallium-arsenide by bismuth

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  274–276
  63. To the Problem of Variation of Shallow-Impurity Compensation Degree under Isovalent Doping of Gallium Arsenide

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1104–1107
  64. Люминесценция неоднородных полупроводниковых твердых растворов

    Fizika i Tekhnika Poluprovodnikov, 18:9 (1984),  1565–1572
  65. On the Dependence of Photoluminescence Quantum Yield in GaAs$_{1-x}$Sb$_{x}$ Solid Solution on Temperature and Composition

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1251–1255
  66. Фотолюминесценция твердых растворов GaAs$_{1-x}$Sb$_{x}$ И Ga$_{1-x}$In$_{x}$As (${x< 0.01}$)

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  108–114
  67. О зависимости ширины запрещенной зоны нелегированного твердого раствора Al$_{x}$Ga$_{1-x}$Sb от состава (${0\leqslant x\leqslant1}$) и температуры (${4.2\leqslant T\leqslant200}$ K)

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  103–107
  68. О корреляции в расположении мелких примесей в арсениде галлия, легированном индием и сурьмой

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:4 (1983),  242–245

© Steklov Math. Inst. of RAS, 2026