Birulin Yu F

Publications in Math-Net.Ru

1. Особенности электрофизических свойств GaAsSb, легированного амфотерной примесь — германием
   
   Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2219–2222
2. Двойное легирование эпитаксиального GaAs изовалентной примесью — висмутом и акцепторной примесью — цинком
   
   Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2217–2219
3. COMPOSITION AND STOCHIOMETRY OF GAAS SURFACE OBTAINED DURING LIQUID-PHASE EPITAXY UNDER ISOVALENT ALLOYING
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  59–61
4. SURFACE OF GALLIUM-ARSENIDE ALLOYED BY ANTIMONY ISOVALENT ADMIXTURE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  43–47
5. Об одной особенности донора — серы в GaP
   
   Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1070–1075
6. Зависимость ширины запрещенной зоны от состава в твердом растворе InP$_{1-x}$Sb$_{x}$ (${x\leqslant 0.07}$)
   
   Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  342–344
7. FEATURES OF THE SURFACE OF GALLIUM-ARSENIDE, GROWN FROM BISMUTH SOLUTION-FUSION
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1794–1799
8. SOLID-SOLUTIONS IN THE GA-SB-BI SYSTEMS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1651–1655
9. Mechanism of «Purification» of Gallium Arsenide by Bismuth
   
   Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2201–2209
10. Effect of Isovalent Indium-Doping on «Natural» Acceptors in Gallium Antimonide
    
    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1118–1124
11. Effect of Isovalent Bismuth Doping on Shallow-Acceptor Concentration in Gallium Arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  949–952
12. Photoluminescence of germanium-alloyed and bismuth-alloyed $Ga\,As$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1264–1267
13. Compensation of radical admixtures in epitaxial layers of $Ga\,As:Bi$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1255–1259
14. Nea photocathodes based on $Ga\,As_{1-x}\,Sb_{x}$ solid-solutions – their application in photomultipliers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987),  833–835
15. Solid-solution in the indium phosphide–indium antimonide system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987),  188–191
16. Photoluminescence of Bismuth-Doped InP
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1258–1261
17. R-P structures based on $Al\,As-Ga$, $As-Ga\,Sb$ solid-solutions with the spectro-sensitive controlled strip
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986),  764–767
18. The purification of gallium-arsenide by bismuth
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  274–276
19. To the Problem of Variation of Shallow-Impurity Compensation Degree under Isovalent Doping of Gallium Arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1104–1107
20. Gallium-arsenide photocathode with the integral sensitivity of $3200$ mkA-lm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:10 (1985),  602–605
21. STRUCTURE CONTROL IN THE ELECTROLIQUID EPITAXY METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1394–1399
22. On the Dependence of Photoluminescence Quantum Yield in GaAs$_{1-x}$Sb$_{x}$ Solid Solution on Temperature and Composition
    
    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1251–1255
23. Фотолюминесценция твердых растворов GaAs$_{1-x}$Sb$_{x}$ И Ga$_{1-x}$In$_{x}$As (${x< 0.01}$)
    
    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  108–114
24. О зависимости ширины запрещенной зоны нелегированного твердого раствора Al$_{x}$Ga$_{1-x}$Sb от состава (${0\leqslant x\leqslant1}$) и температуры (${4.2\leqslant T\leqslant200}$ K)
    
    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  103–107
25. О корреляции в расположении мелких примесей в арсениде галлия, легированном индием и сурьмой
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:4 (1983),  242–245
26. Электрожидкостная эпитаксия в системе (GaAs$_{1-x}$Sb$_{x}$)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:3 (1983),  155–158