Roenkov Aleksandr Dmitrievich

Publications in Math-Net.Ru

1. Graphene-based biosensors for neurodegenerative dementia detection
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
2. Study of stress relief and strain distribution in graphene films of biosensors for viral infections
   
   Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
3. Chemiluminescence of a functionalized graphene surface
   
   Optics and Spectroscopy, 130:9 (2022),  1417–1422
4. Modification in adsorption properties of graphene during the development of viral biosensors
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
5. Studying the sensitivity of graphene for biosensor applications
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
6. Radiation hardness of $n$-GaN Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
7. Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  259–264
8. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
9. Light-emmiting diodes based on silicon carbide irradiated by fast electrons
   
   Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1857–1860
10. Ultraviolet silicon-carbide photodetectors
    
    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1008–1014
11. Effective green light-emitting diodes on silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  107–110
12. Образование и эволюция нитей лавинного тока в обратносмещенных $p{-}n$-переходах на основе $6H$-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 25:7 (1991),  1209–1216
13. Люминесценция эпитаксиальных слоев $6H$-SiC, облученных быстрыми электронами
    
    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  762–766
14. NITROGEN ALLOYING OF SIC EPITAXIAL LAYERS UNDER THE SUBLIMATION SANDWICH-METHOD GROWTH IN VACUUM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  33–37
15. ELECTROLUMINESCENCE OF 6H-SIC, ALLOYED BY GA AND N
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  25–30
16. PHOTODIODES WITH EMISSION IN THE GREEN AREA OF SPECTRUM BASED ON HETEROEPITAXIAL LAYERS OF SILICON-CARBIDE OF 4H-POLYTYPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988),  2222–2226
17. $P^{+}-\pi-N^{+}$-structures based on silicon-carbide with double injection
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987),  1247–1251
18. Origination of structural ruptures in epitaxial layers of silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  641–645
19. Parametric voltage stabilizer based on silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  261–264
20. Collision Ionization in Silicon-Carbide Polytypes
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  814–818
21. CHARACTERISTICS OF CASCADE BREAKDOWN IN ALPHA-CARBIDE SILICON-MATERIAL WITH NATURAL SUPER-LATTICE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:5 (1984),  303–306