Chelnokov Valentin Evgenievich

Publications in Math-Net.Ru

1. REVERSED MESA-STRUCTURE FROM SILICON-CARBIDE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  28–31
2. Высокотемпературный синий светодиод
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:3 (1992),  19–23
3. Высокотемпературный диод Шоттки Au$-$SiC-$6H$
   
   Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  328–333
4. SIC-ALN SOLID-SOLUTIONS GROWN BY THE LIQUID EPITAXY ON SIC-6H SUBSTRATES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  50–53
5. NORMALLY CLOSED SIC (6H) FIELD TRANSISTOR WITH R-P-LOCK
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  1–5
6. Фотолюминесценция аморфных пленок $a$-Si$_{1-x}$C$_{x}$ : H
   
   Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  710–716
7. GREEN SIC-6H-LIGHT EMITTING DIODES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  56–59
8. LIGHT-EMITTING-DIODES WITH LAMBDA-MAX-CONGRUENT-TO 398 NM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  50–52
9. Фиолетовый SiC-$4C$-светодиод
   
   Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  39–43
10. SIC-6H FIELD TRANSISTOR WITH RECORD TRANSCONDUCTANCE FOR CARBIDE-SILICON TRANSISTORS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:16 (1989),  36–42
11. CRYSTALLIZATION OF SILICON-CARBIDE MONOCRYSTAL LAYERS ON SILICON AT 1050-1250-DEGREES-C
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  50–52
12. Синие SiC-$6H$-светодиоды
    
    Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  664–669
13. Электрические характеристики эпитаксиальных $p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$
    
    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  298–300
14. Электростатические свойства SiC-$6H$-структур с резким $p{-}n$-переходом
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  133–136
15. FILMS OF Y-BA-CU-O HTSC ON SEMICONDUCTOR (SIC) SUBLAYERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1779–1781
16. HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1153–1156
17. HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  289–293
18. Photoelectric Laser Magnetospectroscopy of Shallow Donors in Highly Pure GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1771–1777
19. Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987),  1168–1171
20. Dinistor on silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:16 (1987),  991–993
21. Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1654–1657
22. Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  844–848
23. Subnanosecond connection of arsenide-gallium thyristors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986),  925–928
24. Tension limitations obtained by carbide-silicon R-P-structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:13 (1986),  773–776
25. 3-color blue-green-red-indicator formed on monocrystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  541–543
26. Blue light-emitting-diodes based on silicon-carbide containerless liquid epitaxial-growth
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:7 (1986),  385–388
27. Reactive ion-plasma beam etching of silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  240–243
28. Tunnel-diode based on $Si\,C$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  976–978
29. Silicon-carbide light-emitting-diodes in the blueviolet spectrum area
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  246–248
30. Silicon-carbide R-P-structures produced by liquid epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  238–241
31. SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984),  1430–1433
32. RECTIFIER DIODE BASED ON SILICON-CARBIDE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984),  1053–1056
33. EFFECT OF ANNEALING MEDIA ON PROPERTIES OF RADIATION-ALLOYED SILICONS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:11 (1984),  645–649
34. Силовые диоды с барьером Шоттки на арсениде галлия
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  414–417