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Yavich B S

Publications in Math-Net.Ru

  1. Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  770–777
  2. X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure

    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1236–1247
  3. Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1124–1129
  4. Mechanism of degradation of GaAs/AlGaAs laser with quantum pit

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1760–1767
  5. Свойства и особенности кристаллизации эпитаксиальных слоев GaAs, выращенных на подложках Si(100) методом двухстадийного осаждения в МОС гидридном процессе

    Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1022–1029
  6. INJECTION LASER-FIELD-EFFECT TRANSISTOR FAST-RESPONSE OPTOELECTRON INTEGRAL DIAGRAM BASED ON ALGAAS/GAAS HETEROSTRUCTURE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  70–74
  7. MATHEMATICAL-MODELING OF NONSTATIONARY MASS-TRANSFER PROCESSES IN GAS-EPITAXIAL REACTOR VOLUME UNDER GROWING THE STRUCTURES BY THE MOS-HYDRIDE TECHNIQUE

    Zhurnal Tekhnicheskoi Fiziki, 59:4 (1989),  149–153
  8. Получение МОС гидридным методом при пониженном давлении и фотолюминесцентные исследования GaAs/AlGaAs квантово-размерных структур

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1420–1425
  9. EXPERIMENTAL AND NUMERICAL STUDY OF THE GROWTH OF GAAS EPITAXIAL LAYERS AND ALGAAS SOLID-SOLUTIONS IN HORIZONTAL REACTOR AT LOW-PRESSURE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  76–79
  10. Квантово-размерные лазерные AlGaAs/GaAs-гетероструктуры, полученные МОС гидридным методом. Квантовый выход люминесценции и пороги генерации

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2111–2117
  11. FLUCTUATIONS OF A WIDTH OF QUANTUM WELLS AND LOW-TEMPERATURE PHOTOLUMINESCENCE OF GAAS/ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1217–1220
  12. STUDY OF GAAS-ALGAAS QUANTUM-DIMENSIONAL STRUCTURES, OBTAINED BY THE MOS-HYDRIDE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  222–226
  13. CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  778–782
  14. Roentgen-Diffractional and Roentgen-Photoelectronic Measurements of the Parameters of Periodic GaAs–AlGaAs Structures Produced by MOC Hydride Method

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1745–1749
  15. Mechanism of Photocurrent Amplification in GaAs–AlGaAs Structures

    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1327–1329
  16. Electric and Photoelectric Properties of $n^{+}{-}n^{0}{-}n^{+}$ Structures Based on GaAs with Metal Grid in the $n^0$ Range

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  981–983
  17. Effect of Doping Level on Electrophysical Properties of Al$_{0.3}$Ga$_{0.7}$As : Si Solid Solution

    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  754–756
  18. $N$-Type Current–Voltage Characteristic under Electroabsorption in a Double Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  703–706
  19. Mechanism of the $S$-Type Current-Voltage Characteristic in a Multilayer Isotype GaAs$-$AlGaAs Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  494–499
  20. ANALYSIS OF NONSTATIONARY PHENOMENA IN THE REACTOR VOLUME DURING THE AL-GA-AS STRUCTURE GROWING PROCESS WITH SHARP MOC HETEROTRANSITIONS BY THE HYDRIDE METHOD

    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  361–366
  21. Continuous single-mode injection $Ga\,Al\,As$ heterolasers, obtained by gasophase and liquid-phase epitaxial hybrid technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:10 (1986),  577–582
  22. Investigation of factors, determining the thickness homogeneity of gallium-arsenide epitaxial layers in the $Ga(CH_{3})_{3}-As\,H_{3}-H_{2}$ system

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:8 (1986),  506–509
  23. Arsenide-gallium vertical field transistor with the hidden lock

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986),  183–186
  24. Study of GaAs-Based Vertical Field Controlled Phototransistors. Mechanism of Amplification and Kinetics of Photocurrent

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1731–1735
  25. Vertical photo-resistance based on $n^0-Ga\,As$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  800–803
  26. Investigation of multi-layered $Ga\,As-Al\,Ga\,As$ structures on inclined cross-sections, made by the chemical etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  21–24
  27. Электрофизические характеристики метастабильных твердых растворов (Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки

    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1438–1445
  28. Intensities of photoluminescence spectra and lifetime of optical phonon emission in $\mathrm{GaAs}$ crystals and $\mathrm{GaAs}$—$\mathrm{GaAlAs}$ heterostructures

    Fizika Tverdogo Tela, 25:1 (1983),  104–109

© Steklov Math. Inst. of RAS, 2026