Tabarov T S

Publications in Math-Net.Ru

1. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
2. Исследования планарных фотосопротивлений на основе InGaAs/InP со скрытым $p^{+}$-затвором
   
   Fizika i Tekhnika Poluprovodnikov, 24:11 (1990),  1969–1972
3. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером
   
   Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
4. Electric and Photoelectric Properties of $n^{+}{-}n^{0}{-}n^{+}$ Structures Based on GaAs with Metal Grid in the $n^0$ Range
   
   Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  981–983
5. Arsenide-gallium vertical field transistor with the hidden lock
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986),  183–186
6. Study of GaAs-Based Vertical Field Controlled Phototransistors. Mechanism of Amplification and Kinetics of Photocurrent
   
   Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1731–1735
7. Vertical photo-resistance based on $n^0-Ga\,As$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  800–803
8. High-sensitive vertical field phototransistor based on $Ga\,As$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985),  89–93
9. ARSENIDEGALLIUM FIELD-EFFECT TRANSISTORS WITH CONTROLLING P-N TRANSIENTS
   
   Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984),  859–862
10. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
11. Высокоэффективный фотодетектор для ультрафиолетового излучения
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983),  1516–1519