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Zhilyaev Yury Vasilyvich

Publications in Math-Net.Ru

  1. Local thermoelectric effects in wide-gap semiconductors

    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  921–924
  2. Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  91–96
  3. The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga–HCl–NH$_3$–H$_2$–Ar system

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015),  29–34
  4. Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1191–1195
  5. GaAs $p$–$i$–$n$ structures for X-ray detectors grown on Ge and GaAs substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  1–7
  6. Epitaxy of gallium nitride in semi-polar direction on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  21–26
  7. Generating broadband random Gaussian signals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:15 (2010),  102–110
  8. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
  9. Chloride vapor-phase epitaxy of gallium nitride at a reduced source temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  11–16
  10. Экспериментальное наблюдение дырок в $n$-GaAs, высвободившихся в результате оже-распада локализованных состояний

    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  713–717
  11. CAAS EPITAXIAL LAYERS WITH BACKGROUND ACCEPTOR ALLOYING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  28–32
  12. Resonance exciton luminescence of $\mathrm{GaAs}$: transition from the polariton model to approximation of independent excitons and photons

    Fizika Tverdogo Tela, 32:6 (1990),  1801–1805
  13. COMPOSITION STOICHIOMETRY IN GAAS FILMS GROWN BY THE GAS-PHASE EPITAXY METHOD

    Zhurnal Tekhnicheskoi Fiziki, 60:11 (1990),  201–203
  14. ANALYSIS OF THE GAS-PHASE COMPOSITION IN THE SOURCE ZONE BY THE UV ABSORPTION UNDER THE GAAS GROWING IN THE CHLORIDE GAS-TRANSPORT SYSTEM

    Zhurnal Tekhnicheskoi Fiziki, 60:7 (1990),  143–150
  15. EFFECT OF SUBSTRATE EXCHANGE WITH GAS-PHASE ON CRYSTALLIZATION FROM A GAS-TRANSPORT SYSTEM

    Zhurnal Tekhnicheskoi Fiziki, 60:3 (1990),  90–96
  16. Низкотемпературная фотолюминесценция эпитаксиальных пленок фосфида галлия, выращенных на кремниевых подложках

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1303–1305
  17. Перезахват неосновных носителей в условиях фотоионизации в эпитаксиальном $n$-GaAs

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  82–92
  18. OPTIMIZATION OF THE MODE OF GALLIUM-ARSENIDE GROWTH IN CHLORIDE GAS-TRANSPORT SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:24 (1990),  77–82
  19. MATHEMATICAL-MODELING OF PROCESSES IN CHLORIDE GAS-TRANSPORT REACTORS

    Zhurnal Tekhnicheskoi Fiziki, 58:6 (1988),  1229–1233
  20. Использование спектров поляритонной люминесценции для характеристики качества кристаллов GaAs

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1885–1888
  21. Исследование субнаносекундного включения арсенид-галлиевых тиристорных структур

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1134–1137
  22. VISUALIZATION OF THE SUBNANOSECOND SWITCHING OF ARSENIDE-GALLIUM-DIODE STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:16 (1988),  1526–1530
  23. HIGH-VOLTAGE ARSENIDE-GALLIUM FORCE DIODES OF LARGE SQUARE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:13 (1988),  1153–1156
  24. PREDOMINANT RECOMBINATION CENTERS IN PARA-GAAS LAYERS, OBTAINED BY PRECIPITATION FROM THE GAS-PHASE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  181–185
  25. Photoelectric Laser Magnetospectroscopy of Shallow Donors in Highly Pure GaAs

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1771–1777
  26. Propagation of Switched State in Gallium-Arsenide Thyristors

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  129–133
  27. Polariton luminescence in $\mathrm{GaAs}$

    Fizika Tverdogo Tela, 28:9 (1986),  2688–2695
  28. Intensity excitation effect on polariton luminescence in $\mathrm{GaAs}$

    Fizika Tverdogo Tela, 28:1 (1986),  201–207
  29. COMPARATIVE INVESTIGATION OF THE SWITCHING ON PROCESSES OF GALLIUM-ARSENIDE AND SILICON THYRISTORS

    Zhurnal Tekhnicheskoi Fiziki, 56:7 (1986),  1343–1347
  30. Subnanosecond connection of arsenide-gallium thyristors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986),  925–928
  31. SWITCHED ON STATE PROPAGATION IN GAAS THYRISTORS OF THE LARGE AREA

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:23 (1984),  1430–1433
  32. HIGH-POWER, HIGH-SPEED COMMUTATORS BASED ON GAAS DINISTOR STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984),  385–388
  33. MAIN PARAMETERS OF SWITCHING-ON OF ARSENIDE-GALLIUM THYRISTORS

    Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983),  573–575
  34. Распространение включенного состояния в арсенидгаллиевых тиристорах

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:9 (1983),  546–549
  35. Силовые диоды с барьером Шоттки на арсениде галлия

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:7 (1983),  414–417

© Steklov Math. Inst. of RAS, 2026