Andreev Vyacheslav Mikhailovich

Publications in Math-Net.Ru

1. Влияние типа подложки-носителя на резистивные и оптические свойства AlGaAs/GaInAs светоизлучающих инфракрасных диодов
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  330–335
2. Increasing the efficiency of optical power input in AlGaAs/GaAs photovoltaic laser converters
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  209–213
3. Design and efficiency correlation of IR light-emitting diodes based on quantum dimensional heterostructures AlGaAs
   
   Zhurnal Tekhnicheskoi Fiziki, 94:4 (2024),  632–637
4. High-power subnanosecond module based on $p$–$i$–$n$ AlGaAs/GaAs photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  5–8
5. Subnanosecond AlGaAs/GaAs photodetectors with Bragg reflectors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  38–41
6. Degradation study of subnanosecond photovoltaic module parameters during thermocycling
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  44–46
7. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
8. Mesa architecture and efficiency of InGaP/Ga(In)As/Ge solar cells
   
   Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1067–1074
9. High-efficiency photovoltaic modules with solar concentrators
   
   Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  915–921
10. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
11. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
12. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  614–617
13. Dynamics of air humidity in a concentrator photovoltaic module with a drying device
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  52–54
14. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
15. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
16. Investigation of passivating and protecting methods for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  35–37
17. High-efficiency photoelectric units with sunlight concentrators
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  24–26
18. Control system of Sun-tracking accuracy for concentration photovoltaic installations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  11–13
19. Electroinsulated heat sinks for concentrated photovoltaic solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  29–31
20. Increasing the photocurrent of a Ga(In)As subcell in multijunction solar cells based on GaInP/Ga(In)As/Ge heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  41–43
21. Development of methods for liquid etching of a separation mesa-structure in creating multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  14–16
22. Tritium power supply sources based on AlGaAs/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:23 (2019),  30–33
23. Studying the formation of antireflection coatings on multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  15–17
24. Hybrid solar cells with a sunlight concentrator system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  52–54
25. A study of ohmic contacts of power photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  12–15
26. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
27. AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1647–1650
28. An antireflection coating of a germanium subcell in GaInP/GaAs/Ge solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  95–101
29. Thermal characteristics of high-efficiency photovoltaic converters of high-power laser light
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:21 (2018),  105–110
30. High-efficiency AlGaAs/GaAs photovoltaic converters with edge input of laser light
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  42–48
31. On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (-197 $\le T\le$ +85$^\circ$C)
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1374–1379
32. GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1358–1362
33. Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1242–1246
34. Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  715–718
35. New-generation concentrator modules based on cascade solar cells: Design and optical and thermal properties
    
    Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  72–79
36. Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments
    
    Zhurnal Tekhnicheskoi Fiziki, 84:6 (2014),  92–97
37. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1249–1253
38. Photovoltaic modules with cylindrical waveguides in a system for the secondary concentration of solar radiation
    
    Zhurnal Tekhnicheskoi Fiziki, 83:9 (2013),  84–89
39. Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells
    
    Zhurnal Tekhnicheskoi Fiziki, 83:7 (2013),  106–110
40. Fabrication and study of $p$–$n$ structures with crystalline inclusions in the space-charge region
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1677–1680
41. High-efficiency GaSb photocells
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  273–279
42. Evaluation of the conversion efficiency of thin-film single-junction ($a$-Si:H) and tandem ($\mu c$-Si:H + $a$-Si:H) solar cells by analysis of the experimental dark and load current-voltage (I–V) characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  952–959
43. High-efficiency ($\eta$ = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  810–815
44. Parameter optimization of solar modules based on lens concentrators of radiation and cascade photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 80:2 (2010),  118–125
45. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1568–1576
46. Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:9 (2010),  1284–1289
47. Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1118–1123
48. Thermophotovoltaic generators based on gallium antimonide
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  270–277
49. Highly efficient photovoltaic cells based on In$_{0.53}$Ga$_{0.47}$As alloys with isovalent doping
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  240–245