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Sorokin Lev Mikhailovich

Publications in Math-Net.Ru

  1. Structural state of InSb in InSb/opal composite material according to transmission electron microscopy data

    Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  93–95
  2. Dislocation structure of AlN/SiC templates grown by sublimation

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  648–651
  3. The effect of AlN buffer layer morphology on the structural quality of a semipolar GaN layer grown on a Si(001) substrate, according to transmission electron microscopy data

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  51–54
  4. Structural characterization of a short-period superlattice based on the CdF$_{2}$/CaF$_{2}$/Si(111) heterostructure by transmission electron microscopy and X-ray diffractometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  3–6
  5. Study of dentin structural features by computed microtomography and transmission electron microscopy

    Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020),  1449–1461
  6. A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  50–54
  7. An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  26–30
  8. Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers

    Fizika Tverdogo Tela, 61:12 (2019),  2317–2321
  9. Microstructure of Si crystals subjected to irradiation with high-energy H$^+$ ions and heat treatment by high-resolution three-crystal X-ray diffraction and transmission electron microscopy

    Fizika Tverdogo Tela, 61:10 (2019),  1754–1762
  10. On change in the silicon crystal structure implanted with hydrogen ions during annealing based on three-crystal X-ray diffractometry data

    Fizika Tverdogo Tela, 61:8 (2019),  1437–1442
  11. Electrical and magnetic properties of Pb and In nanofilaments in asbestos near the superconducting transition

    Fizika Tverdogo Tela, 60:10 (2018),  1893–1899
  12. Asymmetry of the defect structure of semipolar GaN grown on Si(001)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018),  53–61
  13. Size effects in electrical and magnetic properties of quasi-one-dimensional tin wires in asbestos

    Fizika Tverdogo Tela, 58:3 (2016),  443–450
  14. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71
  15. Optical properties of metal nanoparticles in chrysotile channels

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  96–102
  16. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
  17. Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  89–94
  18. Electron-microscopic study of Sn–chrisotile asbestos nanocomposite

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:7 (2014),  42–48
  19. Structural and optical properties of porous silicon prepared from a $p^+$-epitaxial layer on $n$-Si(111)

    Zhurnal Tekhnicheskoi Fiziki, 83:3 (2013),  96–100
  20. Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1554–1558
  21. Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  25–32
  22. Low-temperature properties of porous silicon-indium nanocomposite

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  24–30
  23. Structural characterization of GaN epilayers on silicon: Effect of buffer layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:7 (2011),  72–79
  24. Features of the current-voltage characteristics and temperature dependences of electric conductivity in porous silicon layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  61–68
  25. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
  26. Молекулярно-пучковая эпитаксия однодоменного арсенида галлия на (001) кремнии, пассивированном водородом

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:2 (1992),  1–5
  27. Mechanism of microdefect formation during growing the dislocation-free silicon monocrystals

    Fizika Tverdogo Tela, 33:11 (1991),  3229–3234
  28. Coesite nature of rodlike defects in Czochralski-grown and annealed silicon

    Fizika Tverdogo Tela, 32:12 (1990),  3659–3667
  29. Kinetics of phosphorus solid solution decomposition in diffused $\mathrm{Si}$ layers

    Fizika Tverdogo Tela, 31:10 (1989),  182–188
  30. Misfit stress relaxation in $\mathrm{In}_{1-x}\mathrm{Ga}_{x}\mathrm{As}_{1-y}\mathrm{Sb}_{y}/\mathrm{GaSb}(x\sim 0.1,y\sim 0.2)$ heterostructures

    Fizika Tverdogo Tela, 31:8 (1989),  158–163
  31. Dislocation-nucleated low-temperature phase $D_{4h}$ in the surface layer of $\mathrm{SrTiO}_{3}$

    Fizika Tverdogo Tela, 30:7 (1988),  2066–2070
  32. Stress fields and diffraction contrast of rod-like defects in silicon

    Fizika Tverdogo Tela, 30:7 (1988),  2040–2045
  33. EFFECT OF NEUTRON-IRRADIATION ON STRUCTURAL DEFECTS IN CRUCIBLELESS SILICON

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1591–1593
  34. X-RAY-DIFFRACTION ANALYSIS OF STRUCTURAL PERFECTION OF MONOCRYSTALS OF CADMIUM TELLURIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:15 (1988),  1410–1413
  35. Study of $D$-type microdefects in $\mathrm{Si}$

    Fizika Tverdogo Tela, 29:9 (1987),  2623–2628
  36. An X-ray topographic study of $D$-defects in silicon

    Fizika Tverdogo Tela, 29:6 (1987),  1858–1861
  37. MEASURING THE SCATTERING OF X-RAYS UNDER THE MIRROR REFLECTION IN THE DIFFERENTIAL REGIME

    Zhurnal Tekhnicheskoi Fiziki, 57:7 (1987),  1436–1438
  38. Diffuse x-ray scattering from defects in germanium-lithium single crystals

    Fizika Tverdogo Tela, 28:12 (1986),  3734–3736
  39. A study of the nature of microdefects in dislocation-free silicon single crystals

    Fizika Tverdogo Tela, 28:6 (1986),  1829–1833
  40. Misfit $60^{\circ}$-degree-dislocations in $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs} (001)$ type heterostructures

    Fizika Tverdogo Tela, 27:10 (1985),  2960–2964
  41. Diffusion scattering on rod-like defects in oxygen-containing silicon crystals

    Fizika Tverdogo Tela, 27:3 (1985),  673–677
  42. Experimental observation of dynamical effects at X-ray diffuse scattering

    Fizika Tverdogo Tela, 26:11 (1984),  3445–3447
  43. Diffusion scattering distribution near Bragg reflections and its peculiarities at X-ray-diffraction by $\mathrm{Ge}$ single crystals doped with $\mathrm{As}$

    Fizika Tverdogo Tela, 26:7 (1984),  2155–2158
  44. On diffraction shift of dislocation image at $g\times b\neq 0$ and $s\neq 0$

    Fizika Tverdogo Tela, 26:2 (1984),  466–470
  45. New phase formation at decay of saturated lithium solid solution in germanium

    Fizika Tverdogo Tela, 26:2 (1984),  436–440
  46. MEASUREMENT OF THE LOCAL THICKNESS OF CRYSTALS AND OBTAINING PROFILES OF DEFECT DISTRIBUTION ON DEGREES IN ION-ALLOYED SILICON LAYERS BY THE ELECTRON-MICROSCOPY METHOD

    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1330–1333
  47. Studies of the helical dislocation nature

    Fizika Tverdogo Tela, 25:11 (1983),  3313–3319
  48. Effect of impurity environment of sessile Frank loop on its equilibrium configuration

    Fizika Tverdogo Tela, 25:7 (1983),  2051–2056

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