Solomonov Aleksandr Vasil'evich

Publications in Math-Net.Ru

1. Characterization of boron-doped single-crystal diamond by electrophysical methods (review)
   
   Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  5–28
2. Experimental detection of resonant tunneling in the doped structure with a single quantum well by the admittance spectroscopy method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  112–119
3. Investigation of ion-implanted photosensitive silicon structures by electrochemical capacitance–voltage profiling
   
   Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  324–330
4. Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  259–264
5. Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  352–357
6. Нестационарная емкостная спектроскопия глубоких уровней в полупроводниковых твердых растворах: метод определения функции плотности состояний
   
   Fizika i Tekhnika Poluprovodnikov, 25:12 (1991),  2163–2167
7. Нестационарная емкостная спектроскопия глубоких уровней в твердых растворах: донорный уровень в GaAs$_{1-x}$P$_{x}$
   
   Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  64–67
8. On the Determination of the Parameters of Deep Centers in Semiconductors Using DLTS Spectra
   
   Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1734–1736
9. Deep donor level in the $Ga\,As_{1-x}\,P_{x}$ solid-solution
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987),  847–848


10. Андрей Георгиевич Забродский, к 75-летию со дня рождения
    
    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894