Demin Vyacheslav Aleksandrovich

Publications in Math-Net.Ru

1. Structural and electronic properties of composite memristors based on the LiNbO$_3$ matrix with different nanogranules: Co–Fe–B and CoFe
   
   Fizika Tverdogo Tela, 65:9 (2023),  1602–1610
2. Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023),  46–54
3. Percolation effect impact on resistive switching of structures based on nanocomposite (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_3$)$_{100-x}$
   
   Fizika Tverdogo Tela, 64:11 (2022),  1690–1694
4. Frequency-coded control of the conductance of memristors based on nanoscale layers of LiNbO$_3$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composite in trained spiking neural networks
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  3–7
5. Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$
   
   Fizika Tverdogo Tela, 62:9 (2020),  1562–1565
6. Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020),  379–386
7. The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  257–263
8. Conductance quantization in memristive structures based on poly-p-xylylene
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  913–917
9. Memristors based on poly($p$-xylylene) with embedded silver nanoparticles
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  25–28
10. Poly-para-xylylene-based memristors on flexible substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  40–43
11. Adaptive properties of spiking neuromorphic networks with synapses based on memristive elements
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  19–23
12. A precise algorithm of memristor switching to a state with preset resistance
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  20–28
13. An organic memristive element based on single polyaniline/polyamide-6 fiber
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  24–30
14. The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:7 (2014),  87–94