Shreter Yurii Georgievich

Publications in Math-Net.Ru

1. The dynamics of screening of an external electric field in potential walls of the InGaN/GaN quantum well
   
   Fizika Tverdogo Tela, 66:3 (2024),  433–441
2. Space-charge-limited efficiency of electrically-injected carriers localization
   
   Fizika Tverdogo Tela, 65:1 (2023),  138–145
3. Defect-assisted tunneling via Ni/$n$–GaN Schottky barriers
   
   Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023),  1158–1165
4. Space-charge-limited carrier localization in InGaN/GaN quantum wells
   
   Fizika Tverdogo Tela, 64:3 (2022),  371–378
5. High thermal conductivity of bulk GaN single crystal: An accurate experimental determination
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:2 (2020),  112–113
6. Current noise and efficiency droop of light-emitting diodes in defect-assisted carrier tunneling from an InGaN/GaN quantum well
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  104–110
7. Effect of deep centers on charge-carrier confinement in InGaN/GaN quantum wells and on led efficiency
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  796–803
8. Hopping conductivity and dielectric relaxation in Schottky barriers on GaN
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1235–1242
9. On the laser lift-off of lightly doped micrometer-thick $n$-GaN films from substrates via the absorption of IR radiation in sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  116–123
10. Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1387–1394
11. On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  711–716
12. The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016),  1–8
13. Amorphous carbon buffer layers for separating free gallium nitride films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  32–38
14. Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1714–1719
15. Hopping transport in the space-charge region of $p$–$n$ structures with InGaN/GaN QWs as a source of excess $1/f$ noise and efficiency droop in LEDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  847–855
16. Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1107–1116
17. Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  129–136
18. Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1054–1062
19. Mechanism of the GaN LED efficiency falloff with increasing current
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  822–828
20. Classification of dislocation-related luminescence lines in silicon
    
    Fizika Tverdogo Tela, 34:5 (1992),  1513–1521
21. One-dimensional dislocation-related exciton in germanium
    
    Fizika Tverdogo Tela, 32:9 (1990),  2778–2781
22. Dislocation-related exciton line splitting in crystals with nonequilibrium dislocations
    
    Fizika Tverdogo Tela, 32:9 (1990),  2774–2777