Kryuchkov Vladislav Artemovich

Publications in Math-Net.Ru

1. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
2. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
3. Analysis of saturation mechanisms of high-power pulsed semiconductor lasers based on the InGaAsP/InP heterostructure emitting at a wavelength of 1.55 μm
   
   Kvantovaya Elektronika, 55:3 (2025),  141–145
4. The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  96–105
5. Dynamics of laser generation in single-mode microstripe semiconductor laser bar (1065 nm) operating in gain-swithching mode
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  42–48
6. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
7. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
8. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
9. Quasi-cw high-power laser diode mini bars (λ=976 nm) with increased length of a resonator based on asymmetric heterostructures with a broadened waveguide
   
   Kvantovaya Elektronika, 53:1 (2023),  6–10
10. Investigation of the quasi-cw heating dynamics of an active region of high-power semiconductor lasers (λ = 1060 nm) with an ultra-wide emitting aperture (800 μm)
    
    Kvantovaya Elektronika, 52:9 (2022),  794–798
11. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm
    
    Kvantovaya Elektronika, 51:10 (2021),  912–914
12. Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
    
    Kvantovaya Elektronika, 50:8 (2020),  722–726