Fedorov Yurii Vladimirovich

Publications in Math-Net.Ru

1. Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  61–67
2. Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:11 (2014),  80–86
3. Optical properties of the two-dimentional electron gas in the $\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$ heterostructures
   
   Dokl. Akad. Nauk, 348:5 (1996),  608–610
4. Photoluminescence of the three-dimensional and two-dimensional carries in the $\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$-heterostructures
   
   Dokl. Akad. Nauk, 348:1 (1996),  42–44
5. Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping
   
   Dokl. Akad. Nauk, 332:5 (1993),  575–577