RUS  ENG
Full version
PEOPLE

Seisyan Ruben Pavlovich

Publications in Math-Net.Ru

  1. Features of SiO$_2$ layers synthesized on silicon by molecular layer deposition

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  427–431
  2. Temperature-dependent total absorption of exciton polaritons in bulk semiconductors

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  327–330
  3. Effect of a Coulomb well in (In, Ga)As/GaAs quantum wells

    Fizika Tverdogo Tela, 59:6 (2017),  1133–1149
  4. Absorption of the laser radiation by the laser plasma with gas microjet targets

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  53–60
  5. Diamagnetic excitons in semiconductors (Review)

    Fizika Tverdogo Tela, 58:5 (2016),  833–880
  6. Elastic scattering of exciton polaritons

    Fizika Tverdogo Tela, 57:2 (2015),  277–282
  7. “Exciton” photoconductivity in GaAs crystals

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1311–1316
  8. Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  774–780
  9. Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction

    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  604–609
  10. The effect of a UV preionization pulse on short-wave radiation output from a laser-produced-plasma source with a Xe gas-jet target

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014),  38–44
  11. Exciton absorption of the GaAs semiconductor crystals under optical pumping to the conduction band

    Zhurnal Tekhnicheskoi Fiziki, 83:7 (2013),  111–114
  12. Diamagnetic exciton polariton in the interband magnetooptics of semiconductors

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  896–900
  13. Temperature-dependent integral exciton absorption in semiconducting GaAs crystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  9–13
  14. A study of direct optical transitions in silicon single crystals based on transmission spectra

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:13 (2012),  1–7
  15. Interaction of polarized light with comb-shaped metal-coated nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:4 (2012),  34–40
  16. Temperature-dependent integral exciton absorption in semiconducting InP crystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  39–45
  17. Nanolithography in microelectronics: A review

    Zhurnal Tekhnicheskoi Fiziki, 81:8 (2011),  1–14
  18. Temperature-dependent excitonic absorption in long-period multiple In$_x$Ga$_{1-x}$As/GaAs

    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  104–110
  19. Stark effect near the ground state of the \glqq$ A$» -series exciton in $\mathrm{CdS}$

    Fizika Tverdogo Tela, 34:11 (1992),  3580–3587
  20. Absorption edge structure of cadmium and zinc cubic chalcogenides

    Fizika Tverdogo Tela, 34:8 (1992),  2400–2406
  21. EFFECT OF PULSE VACUUM ULTRAVIOLET ON FILMS OF CHALCOGENIDE GLASSY ASSE AND AS2S3 SEMICONDUCTORS

    Zhurnal Tekhnicheskoi Fiziki, 62:3 (1992),  106–113
  22. Quasi-landau oscillating magnetoabsorption of $\mathrm{InP}$ exciton rydberg states in an intermediate magnetic field

    Fizika Tverdogo Tela, 33:6 (1991),  1719–1734
  23. Параметры зонной структуры эпитаксиальных слоев в гетеропереходах In$_{1-x}$Ga$_{x}$As/InP

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  493–503
  24. Exciton absorption linewidth in $\mathrm{In}_{1-x}\mathrm{Ga}_{x}\mathrm{As}/\mathrm{InP}$ solid solutions

    Fizika Tverdogo Tela, 32:4 (1990),  999–1006
  25. «Тонкая» структура края поглощения кристаллов теллурида кадмия

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1160–1163
  26. Край оптического поглощения «чистых» эпитаксиальных слоев InP

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1156–1159
  27. Край оптического поглощения и деформации эпитаксиальных слоев In$_{0.53}$Ga$_{0.47}$As

    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  201–206
  28. Гашение экситонной люминесценции в результате ударной ионизации и механизмы релаксации электронов в сульфиде кадмия

    Fizika i Tekhnika Poluprovodnikov, 23:1 (1989),  138–145
  29. SEMICONDUCTING LASER WITH THE BUILT-IN EXCITON STARK QUALITY MODULATOR BASED ON ALGAAS DHS WITH SINGLE QUANTUM WELL GAAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  20–24
  30. Exciton line structure of the low-temperature band edge luminescence in $\mathrm{InSb}$

    Fizika Tverdogo Tela, 30:1 (1988),  12–31
  31. Магнитоспектроскопия резонансных примесных состояний в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1416–1421
  32. Зеленая люминесценция CdS в поле барьера Шоттки

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1304–1306
  33. ELECTRICAL ABSORPTION UNDER THE WAVE-GUIDE LIGHT TRANSITION THROUGH THE DOUBLE ALGAAS HETEROSTRUCTURE WITH QUANTUM-DIMENSIONAL LAYERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1548–1552
  34. Diamagnetic excitons in hexagonal $\mathrm{A}_{2}\mathrm{B}_{6}$

    Fizika Tverdogo Tela, 29:6 (1987),  1730–1739
  35. Quenching of Low-Temperature Exciton Luminescence in Cadmium-Sulphide «Pure» Crystals with Schottky Barrier

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1695–1701
  36. Low-temperature photoluminescence of heteroepitaxial lead telluride layers

    Fizika Tverdogo Tela, 28:5 (1986),  1348–1352
  37. Exciton states in interband absorption of $\mathrm{PbTe}$ in magnetic field

    Fizika Tverdogo Tela, 28:3 (1986),  855–861
  38. Optical gap formation in the spectrum of heavy germanium holes between Landau-levels

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986),  369–373
  39. FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF OBTAINING PLANAR SILICON P-N-JUNCTIONS

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2064–2066
  40. Absorption and photoluminescence spectra of $\mathrm{Cd}_{x}\mathrm{Hg}_{1-x}\mathrm{Te}$

    Fizika Tverdogo Tela, 25:4 (1983),  1214–1216
  41. Эффекты легирования редкоземельными элементами в низкотемпературной краевой люминесценции InP

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2148–2151
  42. Параметры энергетических зон кристаллов арсенида индия

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  718–720
  43. Обнаружение экситонной люминесценции в кристаллах антимонида индия

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  532–534
  44. Эффект фотопоглощения в спектрах диамагнитных экситонов кристаллов InSb

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  501–503
  45. Diamagnetic excitons in semiconductors

    UFN, 97:2 (1969),  193–210

© Steklov Math. Inst. of RAS, 2026