Gushchina Ekaterina Vladimirovna

Publications in Math-Net.Ru

1. Метод регистрации фазы для визуализации однослойного и двуслойного графена на поверхности SiC
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  18–21
2. Memristor effect in PZT:TiO$_x$ composite film
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:12 (2025),  38–42
3. Graphene-based biosensors for neurodegenerative dementia detection
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
4. Influence of Bi impurity on the main parameters of the current-voltage characteristics of the Ge$_2$Sb$_2$Te$_5$ phase-change memory semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  443–447
5. Study of stress relief and strain distribution in graphene films of biosensors for viral infections
   
   Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
6. $h$-BN surface modification by scanning probe microscope
   
   Fizika Tverdogo Tela, 65:12 (2023),  2128–2131
7. SiC/graphene-based test structures for the Kelvin probe microscopy instrumental function determination
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  24–27
8. Study of triboelectric charges in thin dielectric and semiconductor films by SPM methods
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  711–714
9. An investigation of the conductive and ferroelectric properties of BZT films
   
   Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2159–2164
10. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
11. Effect of the crystal structure on the electrical properties of thin-film PZT structures
    
    Fizika Tverdogo Tela, 60:3 (2018),  547–552
12. Resistance of reduced graphene oxide on polystyrene surface
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:4 (2018),  496–499
13. Graphene on silicon carbide as a basis for gas- and biosensor applications
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
14. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
15. Hexagonal AlN layers grown on sulfided Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
16. Structure of platinum–carbon electrodes containing various forms of nafion proton-conducting polymer
    
    Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017),  1696–1700
17. The influence of substrate material on the resistance of composite films based on reduced graphene oxide and polystyrene
    
    Nanosystems: Physics, Chemistry, Mathematics, 8:5 (2017),  665–669
18. Formation of stable charge regions in an array of germanium nanocrystallites inside SiO$_2$ using electrostatic force microscopy
    
    Zhurnal Tekhnicheskoi Fiziki, 85:5 (2015),  50–56
19. Investigation of the polarization dependence of the transient current in polycrystalline and epitaxial Pb(Zr,Ti)O$_3$ thin films
    
    Fizika Tverdogo Tela, 56:12 (2014),  2366–2375
20. Behavior of charges locally injected into nanothin high-k SmScO$_3$ dielectric
    
    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  122–126
21. Study of the composition, structure, and optical properties of $a$-Si$_{1-x}$C$_x$ : H$\langle$Er$\rangle$ films erbium doped from the Er(pd)$_3$ complex compound
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  353–359
22. Behavior of locally injected charges in high-k nanolayers of LaScO$_3$ insulator on a Si substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:9 (2013),  47–55
23. Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films
    
    Fizika Tverdogo Tela, 54:5 (2012),  944–946
24. Formation of 2D photonic crystal bars by simultaneous photoelectrochemical etching of trenches and macropores in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1666–1672
25. Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  986–994