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Zdoroveyshchev Anton Vladimirovich

Publications in Math-Net.Ru

  1. Термоэлектрические свойства квантовых точек InGaAs/GaAs

    Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  149–160
  2. Control of magnetic characteristics of spin LEDs with a magnetic system “Mn delta layer – InGaAs/GaAs quantum well” due to delta doping with an acceptor impurity

    Fizika Tverdogo Tela, 67:7 (2025),  1348–1353
  3. Study of the Nernst–Ettingshausen effect in thin Co/Pt layers at room temperatures

    Fizika Tverdogo Tela, 67:6 (2025),  1133–1138
  4. Magnetically controlled spin light-emitting diode

    UFN, 195:5 (2025),  543–556
  5. Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing

    Fizika Tverdogo Tela, 66:10 (2024),  1686–1698
  6. Magnetic anisotropy in Co/Pt films prepared by successive layers deposition of subatomic thicknesses

    Fizika Tverdogo Tela, 66:8 (2024),  1272–1277
  7. Methods of modulation of micromagnetic characteristics of multilayer thin-film systems [Co/Pt]

    Fizika Tverdogo Tela, 66:6 (2024),  901–905
  8. Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes

    Fizika Tverdogo Tela, 66:2 (2024),  184–189
  9. Metamorphic InGaAs photodiode with wavelength 1.55 $\mu$m, grown on GaAs substrate

    Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  709–713
  10. Synthesis and thermoelectric properties of higher manganese silicide

    Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  376–380
  11. Manipulating the micromagnetic structure of multiphase CoPt thin films by varying layer thicknesses

    Fizika Tverdogo Tela, 65:6 (2023),  989–995
  12. Effect of high temperature annealing on the physicochemical properties of systems based on FeSi$_x$

    Fizika Tverdogo Tela, 65:3 (2023),  509–512
  13. Ge/Si(001) heteroepitaxial layers doped in the HW CVD process by impurity evaporation from a sublimating Ge source

    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  719–724
  14. MOCVD growth of InGaAs metamorphic heterostructures for photodiodes with low dark current

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  495–500
  15. Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films

    UFN, 193:3 (2023),  331–339
  16. Formation of skyrmion states in ion-irradiated CoPt thin films

    Fizika Tverdogo Tela, 64:9 (2022),  1304–1310
  17. Circularly polarized electroluminescence of InGaAs/GaAs/CoPt spin light emitting diodes placed in a strong and weak magnetic field

    Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  724–730
  18. Distribution of charge carrier concentrations in epitaxial Ge and GeSn layers grown on $n^+$-Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  839–843
  19. Design of tunnel-coupled quantum wells for a Mach–Zehnder scheme modulator construction

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  833–838
  20. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type

    Fizika Tverdogo Tela, 63:7 (2021),  866–873
  21. Effect of ion irradiation on the magnetic properties of CoPt films

    Fizika Tverdogo Tela, 63:3 (2021),  324–332
  22. Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  1975–1983
  23. Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks

    Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1474–1478
  24. Methods for switching radiation polarization in GaAs laser diodes

    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
  25. Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  38–41
  26. The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021),  30–32
  27. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer

    Fizika Tverdogo Tela, 62:3 (2020),  373–380
  28. Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

    Nanosystems: Physics, Chemistry, Mathematics, 11:6 (2020),  680–684
  29. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
  30. Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020),  17–20
  31. Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  40–43
  32. Studies of thermoelectric properties of superlattices based on manganese silicide and germanium

    Fizika Tverdogo Tela, 61:12 (2019),  2344–2348
  33. Modifying the magnetic properties of the CoPt alloy by ion irradiation

    Fizika Tverdogo Tela, 61:9 (2019),  1694–1699
  34. Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures

    Fizika Tverdogo Tela, 61:9 (2019),  1628–1633
  35. Formation of magnetic nanostructures using an atomic force microscope probe

    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1807–1812
  36. Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1293–1296
  37. In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1182–1188
  38. Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  33–36
  39. Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  52–55
  40. Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier

    Fizika Tverdogo Tela, 60:11 (2018),  2236–2239
  41. Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope

    Fizika Tverdogo Tela, 60:11 (2018),  2158–2165
  42. Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment

    Fizika Tverdogo Tela, 60:11 (2018),  2141–2146
  43. Investigation of the initial stages of spark-plasma sintering of Si-Ge based thermoelectric materials

    Nanosystems: Physics, Chemistry, Mathematics, 9:5 (2018),  622–630
  44. Production of Si- and Ge-based thermoelectric materials by spark plasma sintering

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1455–1459
  45. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
  46. Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

    Fizika Tverdogo Tela, 59:11 (2017),  2203–2205
  47. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures

    Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
  48. Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes

    Fizika Tverdogo Tela, 59:11 (2017),  2135–2141
  49. Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

    Fizika Tverdogo Tela, 59:11 (2017),  2130–2134
  50. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

    Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
  51. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

    Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1389–1394
  52. Thermoelectric effects in nanoscale layers of manganese silicide

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1456–1461
  53. Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1447–1450
  54. Optical thyristor based on GaAs/InGaP materials

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
  55. A CVD diamond-based photodetector for the visible and near-IR spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  65–71
  56. Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As

    Fizika Tverdogo Tela, 58:11 (2016),  2190–2194
  57. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes

    Fizika Tverdogo Tela, 58:11 (2016),  2186–2189
  58. Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

    Fizika Tverdogo Tela, 58:11 (2016),  2140–2144
  59. On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1473–1478
  60. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
  61. GaAs structures with a gate dielectric based on aluminum-oxide layers

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  204–207
  62. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer

    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8
  63. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1649–1653
  64. Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1640–1643
  65. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1497–1500
  66. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1478–1483
  67. Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation

    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  804–809
  68. Epitaxial growth of MnGa/GaAs layers for diodes with spin injection

    Fizika Tverdogo Tela, 56:10 (2014),  2062–2065
  69. Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction

    Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014),  102–106
  70. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  96–103
  71. Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1609–1612
  72. GaMnSb/InGaAs/GaAs heterostructure leds with a ferromagnetic injector layer

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1554–1560
  73. Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:16 (2012),  69–77

© Steklov Math. Inst. of RAS, 2026