Demina Polina Borisovna

Publications in Math-Net.Ru

1. Термоэлектрические свойства квантовых точек InGaAs/GaAs
   
   Zhurnal Tekhnicheskoi Fiziki, 96:1 (2026),  149–160
2. Control of magnetic characteristics of spin LEDs with a magnetic system “Mn delta layer – InGaAs/GaAs quantum well” due to delta doping with an acceptor impurity
   
   Fizika Tverdogo Tela, 67:7 (2025),  1348–1353
3. Magnetically controlled spin light-emitting diode
   
   UFN, 195:5 (2025),  543–556
4. Methods of modulation of micromagnetic characteristics of multilayer thin-film systems [Co/Pt]
   
   Fizika Tverdogo Tela, 66:6 (2024),  901–905
5. Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes
   
   Fizika Tverdogo Tela, 66:2 (2024),  184–189
6. Synthesis and thermoelectric properties of higher manganese silicide
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  376–380
7. Manipulating the micromagnetic structure of multiphase CoPt thin films by varying layer thicknesses
   
   Fizika Tverdogo Tela, 65:6 (2023),  989–995
8. Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films
   
   UFN, 193:3 (2023),  331–339
9. Circularly polarized electroluminescence of InGaAs/GaAs/CoPt spin light emitting diodes placed in a strong and weak magnetic field
   
   Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  724–730
10. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer
    
    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
11. Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering
    
    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  1975–1983
12. Methods for switching radiation polarization in GaAs laser diodes
    
    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1409–1414
13. Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  38–41
14. Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit
    
    Nanosystems: Physics, Chemistry, Mathematics, 11:6 (2020),  680–684
15. Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1139–1144
16. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
17. Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020),  17–20
18. Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  40–43
19. Studies of thermoelectric properties of superlattices based on manganese silicide and germanium
    
    Fizika Tverdogo Tela, 61:12 (2019),  2344–2348
20. Micromagnetic and magneto-optical properties of ferromagnetic/heavy metal thin film structures
    
    Fizika Tverdogo Tela, 61:9 (2019),  1628–1633
21. In-situ doping of thermoelectric materials based on SiGe solid solutions during their synthesis by the spark plasma sintering technique
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1182–1188
22. Simulation of the parameters of a titanium-tritide-based beta-voltaic cell
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  101–103
23. Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  33–36
24. Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  52–55
25. Detectors of circularly polarized radiation based on semiconductor heterostructures with a CoPt Schottky barrier
    
    Fizika Tverdogo Tela, 60:11 (2018),  2236–2239
26. Formation of a domain structure in multilayer CoPt films by magnetic probe of an atomic force microscope
    
    Fizika Tverdogo Tela, 60:11 (2018),  2158–2165
27. Investigation of the initial stages of spark-plasma sintering of Si-Ge based thermoelectric materials
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:5 (2018),  622–630
28. Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer
    
    Fizika Tverdogo Tela, 59:11 (2017),  2203–2205
29. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
    
    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
30. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures
    
    Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
31. Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes
    
    Fizika Tverdogo Tela, 59:11 (2017),  2135–2141
32. Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes
    
    Fizika Tverdogo Tela, 58:11 (2016),  2186–2189
33. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
34. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8
35. CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1649–1653
36. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1478–1483
37. Epitaxial growth of MnGa/GaAs layers for diodes with spin injection
    
    Fizika Tverdogo Tela, 56:10 (2014),  2062–2065
38. The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  96–103