Bublik Vladimir Timofeevich

Publications in Math-Net.Ru

1. Development of technology for high-strength thermoelectrics with a diameter of up to 35 mm based on Bi$_2$Te$_3$ polycrystals by hot extrusion
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  17–21
2. Temperature dependence of the lattice parameters of Cu$_{2-x}$Se (0.03 $\le x\le$ 0.23) powders fabricated by mechanochemical synthesis
   
   Fizika Tverdogo Tela, 60:11 (2018),  2255–2259
3. Effect of the valence state of ce ions on the phase stability and mechanical properties of the crystals of ZrO$_{2}$-based solid solutions
   
   Fizika Tverdogo Tela, 59:10 (2017),  1914–1919
4. Structure of Bi$_{2}$Se$_{0.3}$Te$_{2.7}$ alloy plates obtained by crystallization in a flat cavity by the Bridgman method
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1064–1067
5. Structure of the Сu$_{2}$Se compound produced by different methods
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  904–907
6. Experimental and theoretical study of the thermoelectric properties of copper selenide
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  892–895
7. Change in the mechanism of conductivity in ZrO$_2$-based crystals depending on the content of stabilizing Y$_{2}$O$_{3}$ additive
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:6 (2017),  23–30
8. Mechanical properties of (Bi, Sb)$_{2}$Te$_{3}$ solid solutions obtained by directional crystallization and spark plasma sintering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  96–103
9. Structure and mechanical properties of crystals of partially stabilized zirconia after thermal treatment
   
   Fizika Tverdogo Tela, 55:8 (2013),  1578–1584
10. Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  754–758
11. Primary mechanism of dissolution of proper components in cadmium sulfide
    
    Dokl. Akad. Nauk SSSR, 307:5 (1989),  1108–1111
12. Lattice constant of cadmium sulfide single crystals grown at various vapour pressures of proper components
    
    Dokl. Akad. Nauk SSSR, 307:3 (1989),  597–600
13. Identification of interstitial clusters in $\mathrm{Si}$-doped $\mathrm{GaAs}$ by diffuse-X-ray scattering
    
    Fizika Tverdogo Tela, 31:6 (1989),  50–56
14. X-ray diffuse scattering by microdefects in silicon prepared with Chohralski method
    
    Fizika Tverdogo Tela, 27:4 (1985),  1246–1248


15. Памяти Сергея Петровича Соловьева к 80-летию со дня рождения (1932–2000)
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1374–1375