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Mikhailov Aleksandr Ivanovich

Publications in Math-Net.Ru

  1. Current transfer in the tunneling microscope probe – tunnel gap – layer of À$^3$B$^5$ and A$^2$B$^6$ semiconductors quantum dots system under illumination

    Zhurnal Tekhnicheskoi Fiziki, 95:5 (2025),  961–966
  2. Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide

    Izv. Sarat. Univ. Physics, 24:4 (2024),  412–417
  3. Investigation of the features of electronic spectrum of quantum dots in narrow-gap semiconductors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:16 (2022),  10–13
  4. Analysis of the energy spectrum of indium antimonide quantum dots with temperature changes

    Nanosystems: Physics, Chemistry, Mathematics, 12:1 (2021),  113–117
  5. Shape effect on the electrical properties of indium-antimonide quantum dots

    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  237–240
  6. Thermionic emission from indium antimonide quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  44–46
  7. Study of the electrophysical properties of colloidal indium antimonide quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  36–38
  8. Methodology of analyzing the InSb semiconductor quantum dots parameters

    Nanosystems: Physics, Chemistry, Mathematics, 10:6 (2019),  720–724
  9. Mechanism and features of field emission in semiconductors

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  340–344
  10. Methodology of analyzing the CdSe semiconductor quantum dots parameters

    Nanosystems: Physics, Chemistry, Mathematics, 9:4 (2018),  464–467
  11. Study of the properties of II–VI and III–V semiconductor quantum dots

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  603–607
  12. Peculiarities of the properties of III–V semiconductors in a multigrain structure

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  83–88
  13. Features of the energy spectrum of indium antimonide quantum dots

    Nanosystems: Physics, Chemistry, Mathematics, 8:5 (2017),  596–599
  14. A study of specific features of the electronic spectrum of quantum dots in CdSe semiconductor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016),  51–58
  15. Research of the contact pads topology influence on the parameters reproducibility of the current oscillations in mesa-planar structures based on semi-insulatinggallium arsenide

    Izv. Sarat. Univ. Physics, 15:1 (2015),  51–56
  16. Manifestation of size quantization on protrusions of a rough A$^3$B$^5$ semiconductor surface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:21 (2015),  88–94
  17. Peculiarities of field electron emission from submicron protrusions on a rough InSb surface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:12 (2015),  8–14
  18. Optimization of the algorithm of the mathematical model of the charge and electric field distribution stabilization in a multilayer semiconductor structure with metal contacts

    University proceedings. Volga region. Physical and mathematical sciences, 2013, no. 4,  133–146


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