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Publications in Math-Net.Ru
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Current transfer in the tunneling microscope probe – tunnel gap – layer of À$^3$B$^5$ and A$^2$B$^6$ semiconductors quantum dots system under illumination
Zhurnal Tekhnicheskoi Fiziki, 95:5 (2025), 961–966
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Investigation of the possibility of implementing a mid-frequency broadband swept-frequency generator based on the structure of semi-insulating gallium arsenide
Izv. Sarat. Univ. Physics, 24:4 (2024), 412–417
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Investigation of the features of electronic spectrum of quantum dots in narrow-gap semiconductors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:16 (2022), 10–13
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Analysis of the energy spectrum of indium antimonide quantum dots with temperature changes
Nanosystems: Physics, Chemistry, Mathematics, 12:1 (2021), 113–117
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Shape effect on the electrical properties of indium-antimonide quantum dots
Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 237–240
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Thermionic emission from indium antimonide quantum dots
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 44–46
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Study of the electrophysical properties of colloidal indium antimonide quantum dots
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 36–38
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Methodology of analyzing the InSb semiconductor quantum dots parameters
Nanosystems: Physics, Chemistry, Mathematics, 10:6 (2019), 720–724
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Mechanism and features of field emission in semiconductors
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 340–344
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Methodology of analyzing the CdSe semiconductor quantum dots parameters
Nanosystems: Physics, Chemistry, Mathematics, 9:4 (2018), 464–467
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Study of the properties of II–VI and III–V semiconductor quantum dots
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 603–607
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Peculiarities of the properties of III–V semiconductors in a multigrain structure
Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 83–88
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Features of the energy spectrum of indium antimonide quantum dots
Nanosystems: Physics, Chemistry, Mathematics, 8:5 (2017), 596–599
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A study of specific features of the electronic spectrum of quantum dots in CdSe semiconductor
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016), 51–58
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Research of the contact pads topology influence on the parameters reproducibility of the current oscillations in mesa-planar structures based on semi-insulatinggallium arsenide
Izv. Sarat. Univ. Physics, 15:1 (2015), 51–56
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Manifestation of size quantization on protrusions of a rough A$^3$B$^5$ semiconductor surface
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:21 (2015), 88–94
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Peculiarities of field electron emission from submicron protrusions on a rough InSb surface
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:12 (2015), 8–14
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Optimization of the algorithm of the mathematical model of the charge and electric field distribution stabilization in a multilayer semiconductor structure with metal contacts
University proceedings. Volga region. Physical and mathematical sciences, 2013, no. 4, 133–146
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