Golovin Vyacheslav Sergeyevich

Publications in Math-Net.Ru

1. Cavity optimisation of high-power InGaAs/AlGaAs/GaAs semiconductor lasers (λ=1060 nm) for efficient operation at ultrahigh pulsed pump currents
   
   Kvantovaya Elektronika, 53:1 (2023),  17–24
2. Analysis of light–current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model
   
   Kvantovaya Elektronika, 52:4 (2022),  343–350
3. Turn on process spatial dynamics of a thyristor laser (905nm) based on an AlGaAs/InGaAs/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  466–472
4. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
5. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
6. Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis
   
   Kvantovaya Elektronika, 50:2 (2020),  147–152
7. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
8. Experimental studies of the on-state propagation dynamics of low-voltage laser-thyristors based on AlGaAs/InGaAs/GaAs heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  7–11
9. Study of multimode semiconductor lasers with buried mesas
   
   Kvantovaya Elektronika, 49:12 (2019),  1172–1174