Voropaev Kirill Olegovich

Publications in Math-Net.Ru

1. Temperature analysis of dark current in pin-photodiodes based on In$_{0.83}$Ga$_{0.17}$As/InP epitaxial heterostructures with metamorphic buffer layers
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  358–364
2. Analysis of Zn diffusion process from the vapor phase in InGaAs/InP materials
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  48–52
3. Linewidth study of MBE-grown wafer-fused single-mode 1.55 $\mu$m VCSELs
   
   Optics and Spectroscopy, 131:11 (2023),  1486–1489
4. Emission linewidth and $\alpha$-factor of 1.55 $\mu$m-range vertical-cavity surface-emitting lasers based on InGaAs/InGaAlAs quantum wells
   
   Optics and Spectroscopy, 131:8 (2023),  1095–1100
5. 1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  814–823
6. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method
   
   Kvantovaya Elektronika, 52:10 (2022),  878–884
7. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
   
   Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
8. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
9. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
10. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
11. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
12. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
13. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
14. Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice
    
    Optics and Spectroscopy, 127:6 (2019),  963–966
15. Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique
    
    Optics and Spectroscopy, 127:1 (2019),  145–149
16. Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1128–1134
17. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm
    
    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
18. High-coupling distributed feedback lasers for the 1.55 μm spectral region
    
    Kvantovaya Elektronika, 49:9 (2019),  801–803
19. Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them
    
    Optics and Spectroscopy, 125:2 (2018),  229–233
20. Vertical-cavity surface-emitting 1.55-$\mu$m lasers fabricated by fusion
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  59–66