Soldatenkov Fedor Yur'evich

Publications in Math-Net.Ru

1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
2. Влияние типа подложки-носителя на резистивные и оптические свойства AlGaAs/GaInAs светоизлучающих инфракрасных диодов
   
   Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  330–335
3. Identification of conditions for the formation of deep states of mismatch dislocations and DX centers in heteroepitaxial lightly doped Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$/GaAs layers
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  165–170
4. Micro-dimensional GaSb photovoltaic converters of high-power density laser radiation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  50–53
5. Identification of the main recombination channels in lightly doped layers of GaAs $p$–$i$–$n$-diodes before and after irradiation with 1 MeV neutrons
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  453–460
6. Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:18 (2024),  22–26
7. Contact systems for photovoltaic converters based on InGaAsP/InP
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  28–31
8. Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs–GaAs-heterostructure to carrier-substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 93:1 (2023),  170–174
9. Defects with deep levels in high-voltage gradual $p$–$i$–$n$ heterojunctions AlGaAsSb/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  644–647
10. Finding the wedge-shaped Au nanoclusters at the surface of GaAs and investigating them with the polarization spectroscopy of plasmons
    
    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  484–490
11. Manifestation of dipole-dipole and quadrupole interactions in the correlator spectrum of optically cooled nuclear spins of a bulk $n$-GaAs sample
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  265–269
12. Front contact to the GaSb-photovoltaic converter: Properties and thermal stability
    
    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  35–41
13. Forming regimes of Pd/Ge/Au contact system to $n$-GaAs influence on its electric parameters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  15–18
14. Effect of chemical passivation of GaAs(001) surface on anisotropy and orientation of gold nanoclusters formed on it and their plasmons
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  613–617
15. Effect of neutron irradiation on the spectrum of deep-level defects in GaAs grown by liquid-phase epitaxy in hydrogen or argon ambient
    
    Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  53–60
16. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
    
    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
17. Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs $p$–$i$–$n$ structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1072–1078
18. A study of ohmic contacts of power photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  12–15
19. Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018),  789–792
20. Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  177–183
21. Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  481–496
22. Study of deep levels in GaAs $p$–$i$–$n$ structures
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  941–945
23. GaSb-based photovoltaic laser-power converter for the wavelength $\lambda\approx$ 1550 nm
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1104–1107
24. Estimation of quality of GaAs substrates used for constructing semiconductor power devices
    
    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  149–152
25. Porous silicon and its applications in biology and medicine
    
    Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014),  67–78
26. Temperature stability of contact systems for GaSb-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1280–1286
27. Surface of porous silicon under hydrophilization and hydrolytic degradation
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1243–1248
28. A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1266–1273
29. GaAs–AlGaAs heterostructure thyristors with completely optical transfer of emitter current
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  524–527
30. Current flow mechanism in ohmic contact to $n$–4H-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  482–485