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Publications in Math-Net.Ru
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High-frequency electron spin resonance study of a single crystal of Egyptian blue at 4.2 K
Mendeleev Commun., 36:2 (2026), 209–210
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New metal-free dye with an acceptor-anchor group of thieno[3,2-b]thiophene family for dye-sensitized solar cells
Mendeleev Commun., 36:1 (2026), 72–75
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CsPbBr3 and Cs4PbBr6 perovskite nanoparticles: hidden potential of Cs4PbBr6 or ineffective fluorescence?
Mendeleev Commun., 35:2 (2025), 193–195
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Formation of laser-induced periodic surface structures on an As$_{50}$Se$_{50}$ film under femtosecond laser irradiation with wavelengths of 400–800 nm
Nanosystems: Physics, Chemistry, Mathematics, 16:6 (2025), 908–914
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Evolution of the luminescence properties of single CsPbBr$_3$ perovskite nanocrystals during photodegradation
Pis'ma v Zh. Èksper. Teoret. Fiz., 118:8 (2023), 570–577
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Formation of periodic two-phase structures on the surface of amorphous Ge$_2$Sb$_2$Te$_5$ films under the action of ultrashort laser pulses of different durations and repetition rates
Optics and Spectroscopy, 131:2 (2023), 196–201
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Kinetics of reversible phase transitions in Ge$_2$Sb$_2$Te$_5$ thin films at femtosecond laser irradiation
Optics and Spectroscopy, 131:2 (2023), 145–153
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New thieno[3,2-b]indole conjugates with 5-(methylene)rhodanine-3-acetic acid in dye-sensitized solar cells
Mendeleev Commun., 32:4 (2022), 523–526
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Phase change memory materials and their applications
Usp. Khim., 91:9 (2022), 1–39
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Influence of thermal treatment of nanometer-sized titanate and barium orthotitanate precursors on the electrorheological effect
Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 746–753
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Dielectric properties of nanocrystalline tungsten oxide in the temperature range of 223–293 K
Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 745–750
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Laser-induced modification of the surface of Ge$_{2}$Sb$_{2}$Te$_{5}$ thin films: phase changes and periodic-structure formation
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 664–670
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Bis(4-cyano-1-pyridino)pentane halobismuthates. Light-harvesting material with an optical band gap of 1.59 eV
Mendeleev Commun., 27:3 (2017), 271–273
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Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb$_{2}$Te$_{3}$ chalcogenide semiconductors
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 154–160
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Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 958–962
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Positronics of radiation-induced effects in chalcogenide glassy semiconductors
Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 307–313
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Current-voltage characteristics of thin Ge$_2$Sb$_2$Te$_5$ films taken using a measuring circuit with a current source
Zhurnal Tekhnicheskoi Fiziki, 84:4 (2014), 80–84
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Influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films
Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 597–603
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Phase transitions in thin Ge$_2$Sb$_2$Te$_5$ chalcogenide films according to Raman spectroscopy data
Fizika i Tekhnika Poluprovodnikov, 46:5 (2012), 609–612
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Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS
Fizika i Tekhnika Poluprovodnikov, 45:4 (2011), 433–436
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Erbium photoluminescence in potential ErQ$_3$ phosphor for organic LEDs
Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011), 47–54
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