Mizerov Andrei Mikailovich

Publications in Math-Net.Ru

1. Electronic structure of the valence band of gallium nitride during sodium adsorption
   
   Fizika Tverdogo Tela, 67:4 (2025),  617–623
2. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications
   
   Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
3. Changes in the electronic properties of the GaN/Si(111) surface under Li adsorption
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  961–965
4. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
5. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080
6. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
7. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
8. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
9. Photoemission studies of the electronic structure of GaN grown by plasma assisted molecular beam epitaxy
   
   Fizika Tverdogo Tela, 61:12 (2019),  2294–2297
10. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates
    
    Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
11. The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1726–1732
12. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
13. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
14. Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1010–1016
15. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
16. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
17. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
    
    Kvantovaya Elektronika, 49:6 (2019),  545–551
18. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
19. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
20. Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  524
21. The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  47–54
22. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  283–286
23. Quantum-confined stark effect and localization of charge carriers in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells with different morphologies
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1022–1026
24. RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  96–102
25. Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  88–95