Len'shin Aleksandr Sergeevich

Publications in Math-Net.Ru

1. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications
   
   Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
2. Influence of etching modes on the morphology and composition of the surface of multilayer porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  613–616
3. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
4. Properties of compliant porous silicon-based substrates formed by two-stage etching
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1021–1026
5. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
6. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
7. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
8. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
9. Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1010–1016
10. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
11. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
    
    Kvantovaya Elektronika, 49:6 (2019),  545–551
12. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
13. Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1041–1048
14. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
15. Specific features of the optical characteristics of porous silicon and their modification by chemical treatment of the surface
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  342–348
16. Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  118–124
17. Composition of nanocomposites of thin tin layers on porous silicon, formed by magnetron sputtering
    
    Fizika Tverdogo Tela, 59:4 (2017),  773–782
18. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1160–1167
19. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1131–1137
20. Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  193–197
21. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
22. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
23. Variations of the optical characteristics of nano-, meso-, and macroporous silicon with time
    
    Zhurnal Tekhnicheskoi Fiziki, 85:7 (2015),  151–155
24. Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1540–1545
25. Al$_x$Ga$_{1-x}$As/GaAs(100) hetermostructures with anomalously high carrier mobility
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1043–1049
26. Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  936–941
27. Optical characteristics of porous silicon structures
    
    Zhurnal Tekhnicheskoi Fiziki, 84:2 (2014),  70–75
28. Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1564–1569
29. Structural and optical properties of heavily doped Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$:Mg alloys produced by metal-organic chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1123–1131
30. Specific features of the sol–gel formation and optical properties of 3$d$ metal/porous silicon composites
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  570–575
31. Structure and optical properties of heterostructures based on MOCVD (Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$)$_{1-z}$Si$_z$ alloys
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  23–31
32. Structural and optical properties of porous silicon prepared from a $p^+$-epitaxial layer on $n$-Si(111)
    
    Zhurnal Tekhnicheskoi Fiziki, 83:3 (2013),  96–100
33. Optical properties of porous silicon processed in tetraethyl orthosilicate
    
    Zhurnal Tekhnicheskoi Fiziki, 83:2 (2013),  136–140
34. Influence of natural aging on photoluminescence from porous silicon
    
    Zhurnal Tekhnicheskoi Fiziki, 82:2 (2012),  150–152
35. Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on $n$-type substrates with an epitaxially deposited $p^+$-layer
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1101–1107
36. Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  739–750
37. Photoemission features of organic dyes in matrix of porous silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:23 (2012),  77–82
38. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on $n$- and $p$-type substrates
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1229–1234
39. Effect of natural aging on photoluminescence of porous silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011),  1–8


40. X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si
    
    Fizika Tverdogo Tela, 55:10 (2013),  2046–2049