Zolotukhin Dmitry Sergeyevich

Publications in Math-Net.Ru

1. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
2. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
3. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
4. Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1010–1016
5. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
6. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
   
   Kvantovaya Elektronika, 49:6 (2019),  545–551
7. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
8. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890