Goloshchapov Dmitrii Leonidovich

Publications in Math-Net.Ru

1. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications
   
   Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
2. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
3. Properties of compliant porous silicon-based substrates formed by two-stage etching
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1021–1026
4. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
5. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
6. Spectroscopic studies of integrated GaAs/Si heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
7. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
8. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
9. A spectroscopic study of changes in the secondary structure of proteins of biological fluids of the oral cavity by synchrotron infrared microscopy
   
   Optics and Spectroscopy, 127:6 (2019),  917–925
10. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
11. Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1010–1016
12. On the morphology and optical properties of molybdenum disulfide nanostructures from a monomolecular layer to a fractal-like substructure
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  940–946
13. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
14. Semiconductor–metal phase transition and “tristable” electrical switching in nanocrystalline vanadium oxide films on silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019),  3–5
15. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
    
    Kvantovaya Elektronika, 49:6 (2019),  545–551
16. A simultaneous analysis of microregions of carious dentin by the methods of laser-induced fluorescence and Raman spectromicroscopy
    
    Optics and Spectroscopy, 125:5 (2018),  708–715
17. Photoluminescence properties of nanoporous nanocrystalline carbonate-substituted hydroxyapatite
    
    Optics and Spectroscopy, 124:2 (2018),  191–196
18. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
19. Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1041–1048
20. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
21. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1160–1167
22. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
23. Al$_x$Ga$_{1-x}$As/GaAs(100) hetermostructures with anomalously high carrier mobility
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1043–1049
24. Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  936–941
25. Formation of nanostructures from colloidal solutions of silicon dioxide and carbon nanotubes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:4 (2015),  1–6
26. Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1564–1569