Seredin Pavel Vladimirovich

Publications in Math-Net.Ru

1. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications
   
   Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
2. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
3. Properties of compliant porous silicon-based substrates formed by two-stage etching
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1021–1026
4. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
5. Structural and spectroscopic studies of epitaxial GaAs layers grown on compliant substrates based on a superstructure layer and protoporous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  86–95
6. Spectroscopic studies of integrated GaAs/Si heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  34–40
7. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates
   
   Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
8. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
9. A spectroscopic study of changes in the secondary structure of proteins of biological fluids of the oral cavity by synchrotron infrared microscopy
   
   Optics and Spectroscopy, 127:6 (2019),  917–925
10. On the phase composition, morphology, and optical and electronic characteristics of AlN nanofilms grown on misoriented GaAs (100) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1584–1592
11. Structural and morphological properties of hybrid heterostructures based on gan grown on a compliant por-Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1141–1151
12. Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1010–1016
13. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
14. Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
    
    Kvantovaya Elektronika, 49:6 (2019),  545–551
15. A simultaneous analysis of microregions of carious dentin by the methods of laser-induced fluorescence and Raman spectromicroscopy
    
    Optics and Spectroscopy, 125:5 (2018),  708–715
16. Photoluminescence properties of nanoporous nanocrystalline carbonate-substituted hydroxyapatite
    
    Optics and Spectroscopy, 124:2 (2018),  191–196
17. Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1553–1562
18. Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1041–1048
19. Effect of misorientation and preliminary etching of the substrate on the structural and optical properties of integrated GaAs/Si(100) heterostructures produced by vapor phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  881–890
20. Influence of substrate misorientation on the composition and the structural and photoluminescence properties of epitaxial layers grown on GaAs(100)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  118–124
21. Composition of nanocomposites of thin tin layers on porous silicon, formed by magnetron sputtering
    
    Fizika Tverdogo Tela, 59:4 (2017),  773–782
22. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P on their optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1160–1167
23. Experimental studies of the effects of atomic ordering in epitaxial Ga$_{x}$In$_{1-x}$P alloys on their structural and morphological properties
    
    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1131–1137
24. Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  193–197
25. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
26. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
27. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876
28. Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  212–217
29. Variations of the optical characteristics of nano-, meso-, and macroporous silicon with time
    
    Zhurnal Tekhnicheskoi Fiziki, 85:7 (2015),  151–155
30. Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1540–1545
31. Al$_x$Ga$_{1-x}$As/GaAs(100) hetermostructures with anomalously high carrier mobility
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1043–1049
32. Investigations of nanodimensional Al$_2$O$_3$ films deposited by ion-plasma sputtering onto porous silicon
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  936–941
33. Optical characteristics of porous silicon structures
    
    Zhurnal Tekhnicheskoi Fiziki, 84:2 (2014),  70–75
34. Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1564–1569
35. Structural and optical properties of heavily doped Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$:Mg alloys produced by metal-organic chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1123–1131
36. Specific features of the sol–gel formation and optical properties of 3$d$ metal/porous silicon composites
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  570–575
37. Structure and optical properties of heterostructures based on MOCVD (Al$_x$Ga$_{1-x}$As$_{1-y}$P$_y$)$_{1-z}$Si$_z$ alloys
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  23–31
38. Optical properties of porous silicon processed in tetraethyl orthosilicate
    
    Zhurnal Tekhnicheskoi Fiziki, 83:2 (2013),  136–140
39. Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  9–14
40. Superstructured ordering in Al$_x$Ga$_{1-x}$As and Ga$_x$In$_{1-x}$P alloys
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  3–8
41. Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on $n$-type substrates with an epitaxially deposited $p^+$-layer
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1101–1107
42. Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  739–750
43. Spinodal decomposition of Ga$_x$In$_{1-x}$As$_y$P$_{1-y}$ quaternary alloys
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1489–1497
44. XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on $n$- and $p$-type substrates
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1229–1234
45. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al$_x$Ga$_{1-x}$As (100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  488–499
46. Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1140–1146
47. The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  194–199


48. Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions
    
    Fizika Tverdogo Tela, 55:10 (2013),  2054–2057
49. X-ray diffraction studies of heterostructures based on solid solutions Al$_x$Ga$_{1-x}$As$_y$P$_{1-y}$ : Si
    
    Fizika Tverdogo Tela, 55:10 (2013),  2046–2049