Alekseev Aleksei Nikolaevich

Publications in Math-Net.Ru

1. Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy
   
   Kvantovaya Elektronika, 49:6 (2019),  540–544
2. Study of the influence of Ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1507–1509
3. Specific features of NH$_3$ and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  94–97
4. Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH$_3$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:17 (2015),  83–93
5. Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1460–1462
6. Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  88–95