Svetogorov Vladimir Nikolaevich

Publications in Math-Net.Ru

1. Sources of high-power laser pulses of sub-nanosecond duration based on thyristor switch-laser diode structures for the 1500nm spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:17 (2025),  49–52
2. Sources of high-power laser pulses at a wavelength of 1550 nm based on thyristor switch-laser designs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  21–25
3. Hybrid stacks of thyristor switch – semiconductor laser based on AlInGaAsP/InP heterostructures for high-power pulsed laser sources (1400–1500 nm)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  165–170
4. Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  161–164
5. Thyristor switches based on hetero and homostructures (Al)GaAs/GaAs for generating high-frequency nanosecond current pulses
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  43–46
6. High-current low-voltage switches for nanosecond pulse durations based on thyristor (Al)GaAs/GaAs homo- and heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  678–683
7. Low-voltage InP heterostyristors for 50–150 ns current pulses generation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  29–32
8. Features of high-power uni-traveling-carrier InGaAs/InP photodiodes
   
   Kvantovaya Elektronika, 53:11 (2023),  883–886
9. New high-reliability optical transmission modules based on powerful superluminescent diodes in the spectral range 1.5 – 1.6 μm
   
   Kvantovaya Elektronika, 53:7 (2023),  561–564
10. Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes
    
    Kvantovaya Elektronika, 52:6 (2022),  577–579
11. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm
    
    Kvantovaya Elektronika, 51:10 (2021),  909–911
12. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
    
    Kvantovaya Elektronika, 51:4 (2021),  283–286
13. Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
    
    Kvantovaya Elektronika, 51:2 (2021),  133–136
14. AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier
    
    Kvantovaya Elektronika, 50:12 (2020),  1123–1125
15. Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells
    
    Kvantovaya Elektronika, 50:9 (2020),  830–833
16. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
    
    Kvantovaya Elektronika, 50:6 (2020),  600–602
17. AlGaInAs/InP semiconductor lasers with an increased electron barrier
    
    Kvantovaya Elektronika, 49:6 (2019),  519–521