Sokolov Igor' Albertovich

Publications in Math-Net.Ru

1. Non-steady-state photo-EMF in a periodically poled MgO : LiNbO$_3$ crystal
   
   Fizika Tverdogo Tela, 65:2 (2023),  207–211
2. Phase transformations of amorphous binary semiconductor under pulsed laser irradiation
   
   Fizika Tverdogo Tela, 33:1 (1991),  99–103
3. STUDY OF CRYSTAL QUALITY OF ALXGA1-XAS SOLID-SOLUTIONS IN RELATION TO SURFACE RECONSTRUCTION IN THE COURSE OF EPITAXIAL-GROWTH FROM MOLECULAR-BEAMS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  42–44
4. LINES OF POWER SEMICONDUCTING LASERS MADE BY THE MOLECULAR-BEAM EPITAXY METHOD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:7 (1991),  31–34
5. STUDY OF SEMICONDUCTING ALGAAS-GAAS HETEROLASER OBTAINED BY THE MOLECULAR-BEAM EPITAXY TECHNIQUE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  6–10
6. NONSTATIONARY PHOTO-EMF UNDER THE 2-FREQUENCY NON-LINEAR EXCITATION REGIME
   
   Zhurnal Tekhnicheskoi Fiziki, 59:10 (1989),  126–129
7. DYNAMICS OF FUSION AND CRYSTALLIZATION OF THIN AMORPHOUS IMPLANTED SILICON LAYERS UNDER NANOSECOND LASER-PULSES
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  13–17
8. LASER PURIFICATION OF SUBLAYERS FOR MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE - DIFFRACTION STUDY OF FAST ELECTRONS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:1 (1989),  67–69
9. NONSTATIONARY PHOTO-EMF IN THE NONLINEAR EXCITATION REGIME
   
   Zhurnal Tekhnicheskoi Fiziki, 58:2 (1988),  429–431
10. Исследование вольтамперных характеристик гетеропереходов $p$-Pb$_{0.8}$Sn$_{0.2}$Te/$n$-PbTe$_{0.92}$Se$_{0.08}$
    
    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1474–1478
11. EFFECT OF INTRODUCTION ADMIXTURES ON LUMINESCENT PROPERTIES OF IMPLANTED INDIUM-PHOSPHIDE AFTER LASER ANNEALING
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  176–181
12. Reduction of luminescent properties of implanted indium-phosphide induced by pulse laser-emission
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986),  1217–1222
13. Dynamics of melting of crystal indium-phosphide under nanosecond laser pulsations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1119–1122
14. Anomalous behavior of optical characteristics of indium-phosphide fusion, obtained by the nanosecond laser-pulse
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1115–1119
15. INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER ANNEALING
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2144–2148
16. INJECTION INGAASP/INP HETEROLASER WITH DISTRIBUTED FEEDBACK OBTAINED BY INTERFERENCE LASER ANNEALING
    
    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2034–2036
17. The effect of nanosecond laser-pulses on the melting of graphite and diamonds
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  921–924
18. The effect of nanosecond laser-pulses on indium-phosphide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985),  916–920
19. Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985),  368–371
20. DUAL WAVELENGTH LASER ANNEALING OF SEMICONDUCTORS
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1408–1410
21. Auger-electronic microanalysis of oxidized lead sulfide polycrystalline layer
    
    Dokl. Akad. Nauk SSSR, 269:3 (1983),  607–609
22. Интерференционный лазерный отжиг полупроводников
    
    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  235–241
23. Новый фазовый переход в SiC и GaAs под действием пикосекундных лазерных импульсов
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:22 (1983),  1373–1376
24. Аморфизация монокристаллического арсенида галлия под действием пикосекундных световых импульсов
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983),  897–900
25. Эпитаксиальная кристаллизация напыленных слоев кремния на подложках GaP в условиях интерференционного лазерного отжига
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983),  850–853